ROHM Semiconductor GmbH Small and Excellent Thermal Conductivity, NPN 4A 80V Middle Power Transistor 2SCR564F3

Description
2SCR564F3 is a middle power transistor with Low VCE(sat), suitable for low frequency amplifier. HUML2020L3 (DFN2020-3S) is a small leadless surface mount package with excellent thermal and electrical conductivity.
Description
2SCR564F3 is a middle power transistor with Low VCE(sat), suitable for low frequency amplifier. HUML2020L3 (DFN2020-3S) is a small leadless surface mount package with excellent thermal and electrical conductivity.
Datasheet
Datasheet Summary
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2SCR564F3 is an NPN middle power transistor designed for low frequency amplifiers, housed in a leadless HUML2020L3 (DFN2020-3S) surface mount package with excellent thermal and electrical conductivity. It has a collector-emitter voltage rating of 80 V, a continuous collector current of 4 A, and a peak collector current of 8 A. The collector-emitter saturation voltage is 300 mV maximum at a collector current of 2 A and base current of 100 mA. The DC current gain ranges from 120 to 390 at a collector current of 500 mA and collector-emitter voltage of 3 V. The junction temperature operates up to 150 °C, and the device is rated for a storage temperature range of -55 °C to +150 °C.

Datasheet Summary
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2SCR564F3 is an NPN middle power transistor designed for low frequency amplifiers, housed in a leadless HUML2020L3 (DFN2020-3S) surface mount package with excellent thermal and electrical conductivity. It has a collector-emitter voltage rating of 80 V, a continuous collector current of 4 A, and a peak collector current of 8 A. The collector-emitter saturation voltage is 300 mV maximum at a collector current of 2 A and base current of 100 mA. The DC current gain ranges from 120 to 390 at a collector current of 500 mA and collector-emitter voltage of 3 V. The junction temperature operates up to 150 °C, and the device is rated for a storage temperature range of -55 °C to +150 °C.

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Small and Excellent Thermal Conductivity, NPN 4A 80V Middle Power Transistor - 2SCR564F3 - ROHM Semiconductor GmbH
Willich, Germany
Small and Excellent Thermal Conductivity, NPN 4A 80V Middle Power Transistor
2SCR564F3
Small and Excellent Thermal Conductivity, NPN 4A 80V Middle Power Transistor 2SCR564F3
2SCR564F3 is a middle power transistor with Low VCE(sat), suitable for low frequency amplifier. HUML2020L3 (DFN2020-3S) is a small leadless surface mount package with excellent thermal and electrical conductivity.

2SCR564F3 is a middle power transistor with Low VCE(sat), suitable for low frequency amplifier. HUML2020L3 (DFN2020-3S) is a small leadless surface mount package with excellent thermal and electrical conductivity.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH
Product Category Power MOSFET
Product Number 2SCR564F3
Product Name Small and Excellent Thermal Conductivity, NPN 4A 80V Middle Power Transistor
PD 1000 milliwatts
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