The 2SAR523EB is a PNP general purpose transistor in the SOT-416FL (EMT3F) package, rated for a collector-emitter voltage of -50 V and a collector current of -100 mA. It has a power dissipation of 150 mW and a junction temperature range of -55 to +150 °C. The device exhibits a DC current gain (hFE) ranging from 120 to 560 at a collector current of 1 mA and a collector-emitter voltage of 6 V. It features a transition frequency of 300 MHz and an output capacitance of 2.0 pF at 1 MHz. The transistor meets RoHS compliance and is packaged in a reel with a tape width of 8 mm and a reel size of 180 mm, containing 3000 units per reel.
Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
General purpose transistor(-50V,-0.1
Manufacturer: Rohm Semiconductor
Win Source Part Number: 815167-2SAR523EB
Categories: Uncategorized
Popularity: Low
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | |
|---|---|---|---|---|
| Product Category | Transistors | Transistors | Bipolar RF Transistors | RF Transistors |
| Product Number | 2SAR523EB | 2SAR523EB | 276-2SAR523EB | 815167-2SAR523EB |
| Product Name | PNP, SOT-416FL, -50V -100mA, General Purpose Amplification Transistor | PNP General Purpose Amplification Transistor | -50V -0.1A Bipolar Transistor | TRANSISTORS - Transistors (BJT) - Single - 2SAR523EB |
| Polarity | PNP | PNP |
