ROHM Semiconductor GmbH PNP, SOT-416, R1≠R2 Leak Absorption Type Digital Transistor (Bias Resistor Built-in Transistor) for automotive DTA113ZE3HZG

The DTA113ZE3 HZG is a PNP digital transistor with built-in bias resistors (R1 = 1.0 kΩ, R2 = 10 kΩ) in an SOT-416 (EMT3) package, designed for inverter, interface, and driver applications. It has a maximum collector current of -100 mA and a collector-emitter voltage rating of -50 V. The device operates with a power dissipation of 150 mW and is AEC-Q101 qualified for automotive applications. Its transition frequency is 250 MHz at a collector-emitter voltage of -10 V and emitter current of 5 mA. The transistor's input resistance is 0.7 to 1.3 kΩ, and the resistance ratio R2/R1 ranges from 8 to 12.