The 2SD2654 is an NPN bipolar junction transistor designed for low-frequency amplifier and driver applications, housed in the SOT-416 (EMT3) package. It has a collector-emitter voltage rating of 50 V, a collector current of 150 mA, and a power dissipation of 150 mW. The transistor exhibits a high DC current gain (hFE) ranging from 560 to 2700, classified into U, V, and W bins, and a low collector-emitter saturation voltage of up to 300 mV at IC=50 mA and IB=5 mA. The emitter-base voltage is rated at 12 V. The device operates with a junction temperature range up to 150 °C and storage temperature from -55 °C to +150 °C. It is qualified for reflow soldering and suitable for surface-mount assembly.
Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Transistors | Transistors |
| Product Number | 2SD2654 | 2SD2654 |
| Product Name | NPN, SOT-416, 50V 150mA, High hFE & Muting Transistor | NPN High hFE & Muting Transistor |
| Transistor Type | HFET | HFET |
