2SB1730 is a PNP bipolar transistor for general-purpose low-frequency amplification, packaged in the TUMT3 (SOT-323T) case with dimensions specified as ROHM's FV code. It has a collector-emitter voltage rating of −12 V, a collector current of −2 A, and a collector power dissipation of 400 mW. The collector-emitter saturation voltage is −180 mV max at IC = −1 A and IB = −50 mA. The DC current gain (hFE) ranges from 270 to 680 at IC = −200 mA and VCE = −2 V. The transition frequency is 360 MHz at IE = 200 mA and f = 100 MHz. The junction temperature rating is 150 °C, and the storage temperature range is −55 °C to +150 °C. The device is supplied in tape packaging with an ordering quantity of 3000 pieces per reel.
Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Transistors | Transistors |
| Product Number | 2SB1730 | 2SB1730 |
| Product Name | PNP, SOT-323T, -12V -2A, Low VCE(sat) Transistor | PNP Low VCE(sat) Transistor |
| Polarity | PNP | PNP |