ROHM Semiconductor GmbH PNP, SOT-323T, -12V -2A, Low VCE(sat) Transistor 2SB1730

Description
Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
Description
Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
Datasheet
Datasheet Summary
Powered by GS/AI

2SB1730 is a PNP bipolar transistor for general-purpose low-frequency amplification, packaged in the TUMT3 (SOT-323T) case with dimensions specified as ROHM's FV code. It has a collector-emitter voltage rating of −12 V, a collector current of −2 A, and a collector power dissipation of 400 mW. The collector-emitter saturation voltage is −180 mV max at IC = −1 A and IB = −50 mA. The DC current gain (hFE) ranges from 270 to 680 at IC = −200 mA and VCE = −2 V. The transition frequency is 360 MHz at IE = 200 mA and f = 100 MHz. The junction temperature rating is 150 °C, and the storage temperature range is −55 °C to +150 °C. The device is supplied in tape packaging with an ordering quantity of 3000 pieces per reel.

Datasheet Summary
Powered by GS/AI

2SB1730 is a PNP bipolar transistor for general-purpose low-frequency amplification, packaged in the TUMT3 (SOT-323T) case with dimensions specified as ROHM's FV code. It has a collector-emitter voltage rating of −12 V, a collector current of −2 A, and a collector power dissipation of 400 mW. The collector-emitter saturation voltage is −180 mV max at IC = −1 A and IB = −50 mA. The DC current gain (hFE) ranges from 270 to 680 at IC = −200 mA and VCE = −2 V. The transition frequency is 360 MHz at IE = 200 mA and f = 100 MHz. The junction temperature rating is 150 °C, and the storage temperature range is −55 °C to +150 °C. The device is supplied in tape packaging with an ordering quantity of 3000 pieces per reel.

Suppliers

Company
Product
Description
Supplier Links
PNP, SOT-323T, -12V -2A, Low VCE(sat) Transistor - 2SB1730 - ROHM Semiconductor GmbH
Willich, Germany
PNP, SOT-323T, -12V -2A, Low VCE(sat) Transistor
2SB1730
PNP, SOT-323T, -12V -2A, Low VCE(sat) Transistor 2SB1730
Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.

Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.

Supplier's Site Datasheet
PNP Low VCE(sat) Transistor - 2SB1730 - ROHM Semiconductor USA, LLC
Santa Clara, CA, USA
PNP Low VCE(sat) Transistor
2SB1730
PNP Low VCE(sat) Transistor 2SB1730
Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.

Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH ROHM Semiconductor USA, LLC
Product Category Transistors Transistors
Product Number 2SB1730 2SB1730
Product Name PNP, SOT-323T, -12V -2A, Low VCE(sat) Transistor PNP Low VCE(sat) Transistor
Polarity PNP PNP
Unlock Full Specs
to access all available technical data

Similar Products

TRANSISTORS - Transistors (BJT) - Single - 2SA1352E - 855029-2SA1352E - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
IGBT Module - 45337911 - Radwell International
Fuji Electric Corp. of America
Specs
Transistor Type IGBT
View Details
MOSFETs - 1697498 - RS Components, Ltd.
RS Components, Ltd.
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type Soic
View Details