BSM120C12P2C201 is a silicon carbide (SiC) chopper power module integrating a SiC-DMOSFET and SiC-SBD, designed for motor drives, converters, and renewable energy applications. It is housed in a module with M6 mounting screws for main terminals and M5 for heat sink attachment, with a creepage distance of 20 mm between terminals and 10.5 mm to the baseplate. The device supports a maximum drain-source voltage of 1200 V, a continuous drain current of 134 A at 60°C case temperature, and a peak pulse current of 360 A for 10 μs. Total power dissipation is 935 W at 25°C case temperature, with a maximum junction temperature of 175°C. Isolation voltage between terminals and baseplate is 2500 Vrms. The module has a junction-to-case thermal resistance of 0.16 °C/W for the DMOSFET and 0.21 °C/W for the SBD. It complies with AEC-Q200 and RoHS standards.
This product is a chopper module consisting of SiC-DMOSFET and SiC-SBD from ROHM.
This product is a chopper module consisting of SiC-DMOSFET and SiC-SBD from ROHM.
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays
SIC MOSFET, N CHANNEL, 1.2KV, 134A ROHS COMPLIANT: YES
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | Acme Chip Technology Co., Limited | Newark, An Avnet Company | |
|---|---|---|---|---|
| Product Category | Power MOSFET | Power MOSFET | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BSM120C12P2C201 | BSM120C12P2C201 | BSM120C12P2C201 | 88AH6157 |
| Product Name | 1200V, 134A, Chopper, Silicon-carbide (SiC) Power Module | SiC Power Module | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays | Sic Mosfet, N Channel, 1.2Kv, 134A Rohs Compliant Rohm |
| V(BR)DSS | 1200 volts | 1200 volts | ||
| IDSS | 134000 milliamps | 134000 milliamps | ||
| PD | 935000 milliwatts | 935000 milliwatts | ||
| TJ | -40 to 125 C (-40 to 257 F) | -40 to 125 C (-40 to 257 F) | -40 to 150 C (-40 to 302 F) | |
| Package Type | C | TO-3 |
