ROHM Semiconductor GmbH 1200V, 300A, Buck Chopper, Full SiC-Power Module with Trench MOSFET BSM300C12P3E301

Description
BSM300C12P3E301 is a chopper module consisting of Silicon Carbide UMOSFET and Silicon Carbide SBD.
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Description
BSM300C12P3E301 is a chopper module consisting of Silicon Carbide UMOSFET and Silicon Carbide SBD.
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Datasheet
Datasheet Summary
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BSM300C12P3E301 is a 1200 V, 300 A silicon carbide chopper module integrating a trench UMOSFET and a Schottky barrier diode. It uses M6 screw terminals with a 4.5 N·m mounting torque. Maximum junction temperature is 175 °C, with operating range from -40 °C to 150 °C. Drain-source on-state voltage is 1.9 V at 25 °C and up to 4.5 V at 150 °C. Switching delays are 40 ns (turn-on) and 170 ns (turn-off) under inductive load. Isolation voltage is 2500 Vrms. An NTC thermistor with 5 kΩ resistance at 25 °C and B value of 3370 K is included. Stray inductance is 13 nH. Junction-to-case thermal resistance is 0.11 °C/W for both active components.

Datasheet Summary
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BSM300C12P3E301 is a 1200 V, 300 A silicon carbide chopper module integrating a trench UMOSFET and a Schottky barrier diode. It uses M6 screw terminals with a 4.5 N·m mounting torque. Maximum junction temperature is 175 °C, with operating range from -40 °C to 150 °C. Drain-source on-state voltage is 1.9 V at 25 °C and up to 4.5 V at 150 °C. Switching delays are 40 ns (turn-on) and 170 ns (turn-off) under inductive load. Isolation voltage is 2500 Vrms. An NTC thermistor with 5 kΩ resistance at 25 °C and B value of 3370 K is included. Stray inductance is 13 nH. Junction-to-case thermal resistance is 0.11 °C/W for both active components.

Suppliers

Company
Product
Description
Supplier Links
1200V, 300A, Buck Chopper, Full SiC-Power Module with Trench MOSFET - BSM300C12P3E301 - ROHM Semiconductor GmbH
Willich, Germany
1200V, 300A, Buck Chopper, Full SiC-Power Module with Trench MOSFET
BSM300C12P3E301
1200V, 300A, Buck Chopper, Full SiC-Power Module with Trench MOSFET BSM300C12P3E301
BSM300C12P3E301 is a chopper module consisting of Silicon Carbide UMOSFET and Silicon Carbide SBD.

BSM300C12P3E301 is a chopper module consisting of Silicon Carbide UMOSFET and Silicon Carbide SBD.

Supplier's Site Datasheet
Single FETs, MOSFETs - 846-BSM300C12P3E301-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
846-BSM300C12P3E301-ND
Single FETs, MOSFETs 846-BSM300C12P3E301-ND
N-Channel 1200V 300A (Tc) 1360W (Tc) Module

N-Channel 1200V 300A (Tc) 1360W (Tc) Module

Buy Now Datasheet
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BSM300C12P3E301
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BSM300C12P3E301
SICFET N-CH 1200V 300A MODULE

SICFET N-CH 1200V 300A MODULE

Supplier's Site
Sic Mosfet, N Channel, 1.2Kv, 300A Rohs Compliant Rohm - 88AH6164 - Newark, An Avnet Company
Chicago, IL, United States
Sic Mosfet, N Channel, 1.2Kv, 300A Rohs Compliant Rohm
88AH6164
Sic Mosfet, N Channel, 1.2Kv, 300A Rohs Compliant Rohm 88AH6164
SIC MOSFET, N CHANNEL, 1.2KV, 300A ROHS COMPLIANT: YES

SIC MOSFET, N CHANNEL, 1.2KV, 300A ROHS COMPLIANT: YES

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH DigiKey Acme Chip Technology Co., Limited Newark, An Avnet Company
Product Category Power MOSFET Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number BSM300C12P3E301 846-BSM300C12P3E301-ND BSM300C12P3E301 88AH6164
Product Name 1200V, 300A, Buck Chopper, Full SiC-Power Module with Trench MOSFET Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Sic Mosfet, N Channel, 1.2Kv, 300A Rohs Compliant Rohm
V(BR)DSS 1200 volts
IDSS 300000 milliamps
PD 1.36E6 milliwatts
TJ -40 to 125 C (-40 to 257 F)
Package Type E Module Module TO-3
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