The 2SB852K is a PNP Darlington transistor designed for high-gain amplifier applications, featuring a built-in 4kΩ base-emitter resistor. It is packaged in an SOT-346 (SC-59) surface-mount case. The device has a collector-emitter voltage rating of -32V and a continuous collector current of -0.3A. Power dissipation is rated at 200mW, with a junction temperature range of -55°C to +150°C. DC current gain ranges from 1,000 to 5,000, depending on classification, and the transition frequency is 200MHz. The collector-emitter saturation voltage is -1.5V maximum at -200mA collector current and -0.4mA base current.
Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
High-gain Amplifier Transistor (-32V, -0.3A) Product overview: 2SB852K from ROHM Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -32V, -0.3A. Search-friendly keywords include transistor, BJT, switching, amplification, -32V, -0.3A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SB852K can be used for catalog matching and distributor lookup.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 1125038-2SB852K
Manufacturer Homepage: www.rohm.com
RoHS State: Request Verification
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | |
|---|---|---|---|---|
| Product Category | Darlington Transistors | Darlington Transistors | Bipolar RF Transistors | RF Transistors |
| Product Number | 2SB852K | 2SB852K | 276-2SB852K | 1125038-2SB852K |
| Product Name | PNP High gain amplifier Transistor (Darlington) | PNP High gain amplifier Transistor(Darlington) | -32V -0.3A Bipolar Transistor | TRANSISTORS - Transistors (BJT) - Single - 2SB852K |
| Polarity | PNP | PNP | ||
| VCEO | -32 volts | 32 volts | ||
| IC(max) | -300 milliamps | -300 milliamps | ||
| PD | 200 milliwatts | 200 milliwatts |
