BSM080D12P2C008 is a half bridge module consisting of SiC-DMOS and SiC SBD.
BSM080D12P2C008 is a half bridge module consisting of SiC-DMOS and SiC SBD.
Mosfet Array 2 N-Channel (Dual) 1200V (1.2kV) 80A (Tc) 600W Chassis Mount Module
SIC MOSFET, DUAL N CHANNEL, 1.2KV, 80A ROHS COMPLIANT: YES
SIC 2N-CH 1200V 80A MODULE
| ROHM Semiconductor USA, LLC | ROHM Semiconductor GmbH | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Power MOSFET | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | BSM080D12P2C008 | BSM080D12P2C008 | BSM080D12P2C008-ND | 88AH6156 | BSM080D12P2C008 |
| Product Name | SiC Power Module | 1200V, 80A, Half bridge, Silicon-carbide (SiC) Power Module | FET, MOSFET Arrays | Sic Mosfet, Dual N Channel, 1.2Kv, 80A Rohs Compliant Rohm | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Transistor Technology / Material | SiC | ||||
| V(BR)DSS | 1200 volts | 1200 volts | |||
| IDSS | 80000 milliamps | 80000 milliamps | |||
| PD | 600000 milliwatts | 600000 milliwatts | |||
| TJ | -40 to 125 C (-40 to 257 F) | -40 to 125 C (-40 to 257 F) |
