BSM180D12P3C007 is a half bridge module designed for applications such as motor drives, inverters, converters, photovoltaics, wind power generation, and induction heating equipment. It features low surge and low switching loss, enabling high-speed switching capabilities while reducing temperature dependence. The module is constructed using Silicon Carbide (SiC) UMOSFET and SiC Schottky Barrier Diode, which contribute to its efficiency and performance. The product has a maximum drain-source voltage rating of 1200V and can handle a continuous drain current of up to 360A at a case temperature of 60¬8C. It also offers a maximum junction temperature of 150¬8C and an isolation voltage of 2500Vrms. The module's compact design and robust specifications make it suitable for demanding applications requiring reliable power management.
BSM180D12P3C007 is a half bridge module consisting of Silicon Carbide UMOSFET and Silicon Carbide Schottky Barrier Diode.
BSM180D12P3C007 is a half bridge module consisting of Silicon Carbide UMOSFET and Silicon Carbide Schottky Barrier Diode.
Mosfet Array 2 N-Channel (Dual) 1200V (1.2kV) 180A (Tc) 880W Surface Mount Module
Manufacturer: Rohm Semiconductor
Win Source Part Number: 864712-BSM180D12P3C0
Operating Temperature Range: 175°C (TJ)
Features: Mosfet Array 2 N-Channel (Dual) 1200V (1.2kV) 180A (Tc) 880W Surface Mount Module
Package: Module
Package: Bulk
Mounting: Surface Mount
Family Name: BSM180
Categories: Discrete Semiconductor Products
Case / Package: Module
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 73 pct.
Supply and Demand Status: Limited
Quantity per package: 12
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 16 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
SIC MOSFET, DUAL N CHANNEL, 1.2KV, 180A ROHS COMPLIANT: YES
SIC 2N-CH 1200V 180A MODULE
| ROHM Semiconductor USA, LLC | ROHM Semiconductor GmbH | DigiKey | ODG (Origin Data Global) | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | BSM180D12P3C007 | BSM180D12P3C007 | BSM180D12P3C007-ND | BSM180D12P3C007 | 864712-BSM180D12P3C007 | 88AH6161 | BSM180D12P3C007 |
| Product Name | SiC Power Module | 1200V, 180A, Half bridge, Full SiC-Power Module with Trench MOSFET | FET, MOSFET Arrays | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSM180D12P3C007 | Sic Mosfet, Dual N Channel, 1.2Kv, 180A Rohs Compliant Rohm | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Transistor Technology / Material | SiC | Silicon Carbide (SiC) | |||||
| V(BR)DSS | 1200 volts | 1200 volts | 1200 volts | ||||
| IDSS | 180000 milliamps | 180000 milliamps | 180000 milliamps | ||||
| PD | 880000 milliwatts | 880000 milliwatts | |||||
| TJ | -40 to 125 C (-40 to 257 F) | -40 to 125 C (-40 to 257 F) | 175 C (347 F) | 175 C (347 F) |
