ROHM Semiconductor GmbH NPN, SOT-23, 100V 100mA, High-Voltage Amplifier Transistor BSS64A

BSS64A is an NPN silicon transistor in a SOT-23 package for high-voltage amplifier applications, with a collector-emitter breakdown voltage of 100 V and a continuous collector current rating of 100 mA. The device has a collector-base breakdown voltage of 120 V, an emitter-base breakdown voltage of 6 V, and a maximum junction temperature of 150°C. Power dissipation is rated at 200 mW on a reference land and 350 mW on a ceramic board. The DC current gain ranges from 30 to 210, and the transition frequency is 140 MHz. Collector-emitter saturation voltage is 160 mV at 100 mA collector current and 10 mA base current. The output capacitance is 2.5 to 4.0 pF at 1 MHz. The package dimensions and taping specifications are documented for SOT-23, with reel size 180 mm and tape width 8 mm, supplied in 3000-piece reels.