The 2SA2018E3HZG is a PNP silicon transistor in an SOT-416 (EMT3) package, designed for low-frequency amplifier and driver applications. It has a collector-emitter voltage rating of -12 V, a collector current of -500 mA, and a collector-emitter saturation voltage of up to -250 mV at -200 mA collector current and -10 mA base current. The device features a DC current gain (hFE) ranging from 270 to 680 at -2 V collector-emitter voltage and -10 mA collector current, with a transition frequency of 260 MHz. It is AEC-Q101 qualified for automotive applications and has a storage temperature range of -55 to +150°C. The package dimensions are consistent with the SOT-416 format.
Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Transistors |
| Product Number | 2SA2018E3HZG |
| Product Name | PNP, SOT-416, -12V -500mA, Low frequency transistor for Automotive |
| Polarity | PNP |
