ROHM Semiconductor USA, LLC 1200V, 358A, Half bridge, Full SiC-Power Module with Trench MOSFET BSM400D12P3G002

Description
BSM400D12P3G002 is a half bridge module consisting of SiC-UMOSFET and SiC-SBD, suitable for motor drive, inverter, converter, photovoltaics, wind power generation, induction heating equipment.
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Description
BSM400D12P3G002 is a half bridge module consisting of SiC-UMOSFET and SiC-SBD, suitable for motor drive, inverter, converter, photovoltaics, wind power generation, induction heating equipment.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
1200V, 358A, Half bridge, Full SiC-Power Module with Trench MOSFET - BSM400D12P3G002 - ROHM Semiconductor GmbH
Willich, Germany
1200V, 358A, Half bridge, Full SiC-Power Module with Trench MOSFET
BSM400D12P3G002
1200V, 358A, Half bridge, Full SiC-Power Module with Trench MOSFET BSM400D12P3G002
BSM400D12P3G002 is a half bridge module consisting of SiC-UMOSFET and SiC-SBD, suitable for motor drive, inverter, converter, photovoltaics, wind power generation, induction heating equipment.

BSM400D12P3G002 is a half bridge module consisting of SiC-UMOSFET and SiC-SBD, suitable for motor drive, inverter, converter, photovoltaics, wind power generation, induction heating equipment.

Supplier's Site Datasheet
FET, MOSFET Arrays - 846-BSM400D12P3G002-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
846-BSM400D12P3G002-ND
FET, MOSFET Arrays 846-BSM400D12P3G002-ND
Mosfet Array 2 N-Channel (Half Bridge) 1200V (1.2kV) 400A (Tc) 1570W (Tc) Chassis Mount Module

Mosfet Array 2 N-Channel (Half Bridge) 1200V (1.2kV) 400A (Tc) 1570W (Tc) Chassis Mount Module

Buy Now Datasheet
Sic Mosfet, Dual N Channel, 1.2Kv, 400A Rohs Compliant Rohm - 88AH6169 - Newark, An Avnet Company
Chicago, IL, United States
Sic Mosfet, Dual N Channel, 1.2Kv, 400A Rohs Compliant Rohm
88AH6169
Sic Mosfet, Dual N Channel, 1.2Kv, 400A Rohs Compliant Rohm 88AH6169
SIC MOSFET, DUAL N CHANNEL, 1.2KV, 400A ROHS COMPLIANT: YES

SIC MOSFET, DUAL N CHANNEL, 1.2KV, 400A ROHS COMPLIANT: YES

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BSM400D12P3G002 - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BSM400D12P3G002
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BSM400D12P3G002
SIC 2N-CH 1200V 400A MODULE

SIC 2N-CH 1200V 400A MODULE

Supplier's Site

Technical Specifications

  ROHM Semiconductor GmbH DigiKey Newark, An Avnet Company Acme Chip Technology Co., Limited
Product Category Power MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number BSM400D12P3G002 846-BSM400D12P3G002-ND 88AH6169 BSM400D12P3G002
Product Name 1200V, 358A, Half bridge, Full SiC-Power Module with Trench MOSFET FET, MOSFET Arrays Sic Mosfet, Dual N Channel, 1.2Kv, 400A Rohs Compliant Rohm Discrete Semiconductor Products - Transistors - FETs, MOSFETs
V(BR)DSS 1200 volts
IDSS 358000 milliamps
PD 1.57E6 milliwatts
TJ -40 to 125 C (-40 to 257 F)
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