ROHM Semiconductor GmbH Datasheets for Bipolar RF Transistors

Bipolar RF transistors consist of an N-type or P-type layer sandwiched between two layers of the opposite type. They are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors.
Bipolar RF Transistors: Learn more

Product Name Notes
PNP General Purpose Amplification Transistor + NPN Digital transistor -- UMF28N
PNP Low VCE(sat) Transistor + NPN Digital transistor -- EMF5
PNP Low VCE(sat) Transistor + NPN Digital transistor -- UMF5N
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.