ROHM Semiconductor GmbH NPN, SOT-89, 30V 2A, Medium Power Transistor for Automotive 2SCR512PHZG

The 2SCR512P HZG is an NPN medium power transistor in an SOT-89 package, rated for 30 V collector-emitter voltage and 2 A collector current, designed for low-frequency amplification and high-speed switching applications. It features a maximum collector-emitter saturation voltage of 400 mV at 700 mA collector current and 35 mA base current, and a DC current gain between 200 and 500 at 100 mA collector current. The transistor is AEC-Q101 qualified and operates within a junction temperature range up to 150°C.