2SAR567F3 is a PNP middle power transistor designed for low-frequency amplification, housed in a leadless HUML2020L3 (DFN2020-3S) surface-mount package. It has a collector-emitter voltage rating of -120 V, a continuous collector current of -2.5 A, and a peak pulse current of -5 A. The collector-emitter saturation voltage is -200 mV maximum at -800 mA collector and -80 mA base current. DC current gain ranges from 120 to 390 at -100 mA collector current, and the transition frequency is 220 MHz. The junction temperature range is -55 to +150 ℃, with power dissipation limited to 1.0 W on a standard FR4 board and 2.1 W under pulse conditions. The package offers excellent thermal and electrical conductivity.
2SAR567F3 is a middle power transistor with Low VCE(sat), suitable for low frequency amplifier. HUML2020L3 (DFN2020-3S) is a small leadless surface mount package with excellent thermal and electrical conductivity.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | 2SAR567F3 |
| Product Name | Small and Excellent Thermal Conductivity, PNP -2.5A -120V Middle Power Transistor |
| PD | 1000 milliwatts |