ROHM Semiconductor GmbH Small and Excellent Thermal Conductivity, PNP -2.5A -120V Middle Power Transistor 2SAR567F3

Description
2SAR567F3 is a middle power transistor with Low VCE(sat), suitable for low frequency amplifier. HUML2020L3 (DFN2020-3S) is a small leadless surface mount package with excellent thermal and electrical conductivity.
Description
2SAR567F3 is a middle power transistor with Low VCE(sat), suitable for low frequency amplifier. HUML2020L3 (DFN2020-3S) is a small leadless surface mount package with excellent thermal and electrical conductivity.
Datasheet
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2SAR567F3 is a PNP middle power transistor designed for low-frequency amplification, housed in a leadless HUML2020L3 (DFN2020-3S) surface-mount package. It has a collector-emitter voltage rating of -120 V, a continuous collector current of -2.5 A, and a peak pulse current of -5 A. The collector-emitter saturation voltage is -200 mV maximum at -800 mA collector and -80 mA base current. DC current gain ranges from 120 to 390 at -100 mA collector current, and the transition frequency is 220 MHz. The junction temperature range is -55 to +150 ℃, with power dissipation limited to 1.0 W on a standard FR4 board and 2.1 W under pulse conditions. The package offers excellent thermal and electrical conductivity.

Datasheet Summary
Powered by GS/AI

2SAR567F3 is a PNP middle power transistor designed for low-frequency amplification, housed in a leadless HUML2020L3 (DFN2020-3S) surface-mount package. It has a collector-emitter voltage rating of -120 V, a continuous collector current of -2.5 A, and a peak pulse current of -5 A. The collector-emitter saturation voltage is -200 mV maximum at -800 mA collector and -80 mA base current. DC current gain ranges from 120 to 390 at -100 mA collector current, and the transition frequency is 220 MHz. The junction temperature range is -55 to +150 ℃, with power dissipation limited to 1.0 W on a standard FR4 board and 2.1 W under pulse conditions. The package offers excellent thermal and electrical conductivity.

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Small and Excellent Thermal Conductivity, PNP -2.5A -120V Middle Power Transistor - 2SAR567F3 - ROHM Semiconductor GmbH
Willich, Germany
Small and Excellent Thermal Conductivity, PNP -2.5A -120V Middle Power Transistor
2SAR567F3
Small and Excellent Thermal Conductivity, PNP -2.5A -120V Middle Power Transistor 2SAR567F3
2SAR567F3 is a middle power transistor with Low VCE(sat), suitable for low frequency amplifier. HUML2020L3 (DFN2020-3S) is a small leadless surface mount package with excellent thermal and electrical conductivity.

2SAR567F3 is a middle power transistor with Low VCE(sat), suitable for low frequency amplifier. HUML2020L3 (DFN2020-3S) is a small leadless surface mount package with excellent thermal and electrical conductivity.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH
Product Category Power MOSFET
Product Number 2SAR567F3
Product Name Small and Excellent Thermal Conductivity, PNP -2.5A -120V Middle Power Transistor
PD 1000 milliwatts
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