DTA123YEB is a PNP digital transistor with built-in bias resistors (R1 = 2.2kΩ, R2 = 10kΩ) in a SOT-416FL package, designed for inverter, interface, and driver applications. It has a maximum collector current of -100mA and a collector-emitter voltage of -50V. Power dissipation is rated at 150mW. The device operates with input voltage from -12V to 5V and junction temperature up to 150°C. Companion NPN types are in the DTC123Y series.
DTA123YEB is an digital transistor (Resistor built-in type transistor). Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors.
Product overview: DTA123YEB from ROHM Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-DTA123YEB can be used for catalog matching and distributor lookup.
| ROHM Semiconductor GmbH | ERSAELECTRONICS PTE. LTD. | |
|---|---|---|
| Product Category | Transistors | Bipolar RF Transistors |
| Product Number | DTA123YEB | 293-DTA123YEB |
| Product Name | PNP, SOT-416FL, R1≠R2 Leak Absorption Type Digital Transistor (Bias Resistor Built-in Transistor) | Bipolar Transistor |
| Polarity | PNP |
