The 2SD2657 is an NPN silicon transistor designed for low-frequency amplification, with a collector-emitter voltage rating of 30 V and a continuous collector current of 1.5 A. It is packaged in the SOT-346T (TSMT3) format. The device exhibits a collector-emitter saturation voltage of no more than 350 mV at a collector current of 1 A and a base current of 50 mA. It has a DC current gain (hFE) ranging from 270 to 680 at a collector current of 100 mA and a collector-emitter voltage of 2 V. The transition frequency is 300 MHz, and the output capacitance is 11 pF. The junction temperature range is -55°C to +150°C, and the part meets RoHS compliance. Its complementary PNP counterpart is the 2SB1695.
Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Transistors | Transistors |
| Product Number | 2SD2657 | 2SD2657 |
| Product Name | NPN, SOT-346T, 30V 1.5A, Low VCE(sat) Transistor | NPN Low VCE(sat) Transistor |
| Polarity | NPN | NPN |
