ROHM Semiconductor GmbH NPN, TO-252 (DPAK), 30V 10A, Power Transistor 2SCR582D3

2SCR582D3 is an NPN power transistor in a TO-252 (DPAK) package, rated for a collector-emitter voltage of 30 V and a continuous collector current of 10 A. It features a maximum collector-emitter saturation voltage of 350 mV at a collector current of 4 A and a base current of 200 mA. The device has a DC current gain (hFE) ranging from 200 to 500 at a collector current of 1 A and a collector-emitter voltage of 3 V. It supports a maximum power dissipation of 10 W at a case temperature of 25 °C and operates within a junction temperature range up to 150 °C. The part is suitable for low-frequency amplifier applications and complies with the standard TO-252 mounting format.