BSS670 is an N-channel MOSFET rated for 60 V drain-source voltage and 650 mA continuous drain current in an SOT-23 package. It features a maximum on-resistance of 0.68 Ω at 10 V gate-source voltage and 650 mA drain current, with low-voltage drive capability down to 2.5 V. The device includes ESD protection up to 2 kV (HBM), is RoHS compliant, and halogen-free. Thermal resistance from junction to ambient is 357 °C/W on a ceramic board and 625 °C/W on FR4. Junction and storage temperature range is -55 °C to +150 °C. It is packaged in tape and reel with a 180 mm reel size and 8 mm tape width, 3000 pieces per reel.
BSS670 is single Nch 60V 650mA MOSFET and ESD protection diode are included in the SST3 package. This product is ideal for switching circuit and low-side load switch, relay driver applications.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Transistors |
| Product Number | BSS670 |
| Product Name | Nch 60V 650mA, SOT-23, Small Signal MOSFET |
| Polarity | N-Channel |
