The 2SCR567F3 is an NPN middle power transistor for low-frequency amplifiers, in a DFN2020-3S (HUML2020L3) leadless SMD package. It has a collector-emitter voltage rating of 120 V, continuous collector current of 2.5 A, and peak collector current of 5.0 A. Collector-emitter saturation voltage is maximum 200 mV at I_C = 800 mA and I_B = 80 mA. DC current gain ranges from 120 to 390 at I_C = 100 mA and V_CE = 5 V. Transition frequency is 220 MHz. Junction temperature ranges up to 150 °C, with storage from -55 to 150 °C. Power dissipation is 1.0 W on FR4 board. The part meets RoHS and AEC-Q200 standards.
2SCR567F3 is a middle power transistor with Low VCE(sat), suitable for low frequency amplifier. HUML2020L3 (DFN2020-3S) is a small leadless surface mount package with excellent thermal and electrical conductivity.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | 2SCR567F3 |
| Product Name | Small and Excellent Thermal Conductivity, NPN 2.5A 120V Middle Power Transistor |
| PD | 1000 milliwatts |
