ROHM Semiconductor GmbH Small and Excellent Thermal Conductivity, NPN 2.5A 120V Middle Power Transistor 2SCR567F3

Description
2SCR567F3 is a middle power transistor with Low VCE(sat), suitable for low frequency amplifier. HUML2020L3 (DFN2020-3S) is a small leadless surface mount package with excellent thermal and electrical conductivity.
Datasheet
Description
2SCR567F3 is a middle power transistor with Low VCE(sat), suitable for low frequency amplifier. HUML2020L3 (DFN2020-3S) is a small leadless surface mount package with excellent thermal and electrical conductivity.
Datasheet

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Small and Excellent Thermal Conductivity, NPN 2.5A 120V Middle Power Transistor - 2SCR567F3 - ROHM Semiconductor GmbH
Willich, Germany
Small and Excellent Thermal Conductivity, NPN 2.5A 120V Middle Power Transistor
2SCR567F3
Small and Excellent Thermal Conductivity, NPN 2.5A 120V Middle Power Transistor 2SCR567F3
2SCR567F3 is a middle power transistor with Low VCE(sat), suitable for low frequency amplifier. HUML2020L3 (DFN2020-3S) is a small leadless surface mount package with excellent thermal and electrical conductivity.

2SCR567F3 is a middle power transistor with Low VCE(sat), suitable for low frequency amplifier. HUML2020L3 (DFN2020-3S) is a small leadless surface mount package with excellent thermal and electrical conductivity.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH
Product Category Power MOSFET
Product Number 2SCR567F3
Product Name Small and Excellent Thermal Conductivity, NPN 2.5A 120V Middle Power Transistor
PD 1000 milliwatts
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