ROHM Semiconductor GmbH NPN, SOT-457T, 400V 100mA, Middle Power Transistor 2SCR341Q

The 2SCR341Q is an NPN silicon middle power transistor designed for low frequency amplifier applications, housed in the SOT-457T (TSMT6) package. It has a collector-emitter voltage rating of 400 V and a collector current rating of 100 mA. The transistor features a collector-emitter saturation voltage of up to 300 mV at a collector current of 20 mA and base current of 2 mA, with a DC current gain (hFE) ranging from 82 to 270. The device is rated for a maximum junction temperature of 150 °C and has a power dissipation of 0.5 W on a reference land. The part complies with the AEC-Q200 standard. Packaging is supplied in a 180 mm tape reel with a width of 8 mm, containing 3000 pieces per reel.