BSM600D12P3G001 is a half bridge module consisting of SiC-UMOSFET and SiC-SBD, suitable for motor drive, inverter, converter, photovoltaics, wind power generation, induction heating equipment.
Mosfet Array 2 N-Channel (Half Bridge) 1200V (1.2kV) 600A (Tc) 2450W (Tc) Chassis Mount Module
SIC MOSFET, DUAL N CHANNEL, 1.2KV, 600A ROHS COMPLIANT: YES
SIC 2N-CH 1200V 600A MODULE
| ROHM Semiconductor GmbH | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | BSM600D12P3G001 | 846-BSM600D12P3G001-ND | 88AH6171 | BSM600D12P3G001 |
| Product Name | 1200V, 576A, Half bridge, Full SiC-Power Module with Trench MOSFET | FET, MOSFET Arrays | Sic Mosfet, Dual N Channel, 1.2Kv, 600A Rohs Compliant Rohm | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| V(BR)DSS | 1200 volts | |||
| IDSS | 576000 milliamps | |||
| PD | 2.45E6 milliwatts | |||
| TJ | -40 to 125 C (-40 to 257 F) |
