The 2SB1427 is a PNP silicon transistor designed for low-frequency power amplifier applications. It is packaged in an SOT-89 (MPT3) case with a collector-emitter voltage rating of -20 V and a collector current rating of -2 A. The device exhibits a minimum DC current gain (hFE) of 390 at -500 mA collector current and a maximum collector-emitter saturation voltage of -500 mV at -1 A collector current and -50 mA base current. The junction temperature range is -55°C to +150°C, and the transition frequency is 150 MHz. The part complies with the RoHS standard.
Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Transistors | Transistors |
| Product Number | 2SB1427 | 2SB1427 |
| Product Name | PNP, SOT-89, -20V -2A, High hFE Transistor | PNP High hFE Transistor |
| Transistor Type | HFET | HFET |
