ROHM Semiconductor GmbH NPN, SOT-89, 12V 2A, Low VCE(sat) Transistor 2SD2661

Description
Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
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Description
Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
Request a Quote
Datasheet
Datasheet Summary
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The 2SD2661 is an NPN silicon transistor for low-frequency amplification, housed in an SOT-89 package. It has a collector-emitter voltage rating of 12 V, a collector current of 2 A, and a collector-emitter saturation voltage of up to 180 mV at 1 A collector current and 50 mA base current. The DC current gain ranges from 270 to 680 at 200 mA collector current, and the transition frequency is 360 MHz. The device is rated for a maximum junction temperature of 150°C and storage temperatures from -55°C to +150°C. It is supplied in a taped reel packaging with 1000 pieces per reel.

Datasheet Summary
Powered by GS/AI

The 2SD2661 is an NPN silicon transistor for low-frequency amplification, housed in an SOT-89 package. It has a collector-emitter voltage rating of 12 V, a collector current of 2 A, and a collector-emitter saturation voltage of up to 180 mV at 1 A collector current and 50 mA base current. The DC current gain ranges from 270 to 680 at 200 mA collector current, and the transition frequency is 360 MHz. The device is rated for a maximum junction temperature of 150°C and storage temperatures from -55°C to +150°C. It is supplied in a taped reel packaging with 1000 pieces per reel.

Suppliers

Company
Product
Description
Supplier Links
NPN, SOT-89, 12V 2A, Low VCE(sat) Transistor - 2SD2661 - ROHM Semiconductor GmbH
Willich, Germany
NPN, SOT-89, 12V 2A, Low VCE(sat) Transistor
2SD2661
NPN, SOT-89, 12V 2A, Low VCE(sat) Transistor 2SD2661
Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.

Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.

Supplier's Site Datasheet
NPN Low VCE(sat) Transistor - 2SD2661 - ROHM Semiconductor USA, LLC
Santa Clara, CA, USA
NPN Low VCE(sat) Transistor
2SD2661
NPN Low VCE(sat) Transistor 2SD2661
Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.

Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - 2SD2661 - 1126559-2SD2661 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SD2661
1126559-2SD2661
TRANSISTORS - Transistors (BJT) - Single - 2SD2661 1126559-2SD2661
Manufacturer: Rohm Semiconductor Win Source Part Number: 1126559-2SD2661 Manufacturer Homepage: www.rohm.com Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance

Manufacturer: Rohm Semiconductor
Win Source Part Number: 1126559-2SD2661
Manufacturer Homepage: www.rohm.com
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance

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Technical Specifications

  ROHM Semiconductor GmbH ROHM Semiconductor USA, LLC Win Source Electronics
Product Category Transistors Transistors RF Transistors
Product Number 2SD2661 2SD2661 1126559-2SD2661
Product Name NPN, SOT-89, 12V 2A, Low VCE(sat) Transistor NPN Low VCE(sat) Transistor TRANSISTORS - Transistors (BJT) - Single - 2SD2661
Polarity NPN NPN
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