The 2SD1949 is an NPN silicon transistor in a SOT-323 (UMT3) package designed for low-frequency amplification and driver applications. It has a collector-emitter voltage rating of 50 V, a continuous collector current of 500 mA, and a maximum power dissipation of 200 mW. The collector-emitter saturation voltage is guaranteed not to exceed 400 mV at a collector current of 150 mA and a base current of 15 mA. The DC current gain (hFE) ranges from 120 to 270 for the Q rank. The device operates with a junction temperature up to 150 °C and a storage temperature range of -55 °C to +150 °C. It features a transition frequency of 250 MHz and an output capacitance of 6.5 pF at 10 V collector-base voltage. Packaging is supplied in 3000-piece reels with a tape width of 8 mm. The device meets RoHS compliance.
Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Transistors | Transistors |
| Product Number | 2SD1949 | 2SD1949 |
| Product Name | NPN, SOT-323, 50V 0.5A, Driver Transistor | NPN Driver Transistor |
| Polarity | NPN | NPN |
