The 2SB1690 is a PNP transistor packaged in a SOT-346T configuration, designed for general-purpose amplification applications with a maximum collector-emitter voltage of -12V and a collector current rating of -2A. It features a low collector saturation voltage (VCE(sat)) of a maximum of -180mV at a collector current of -1A and a base current of -50mA, making it suitable for efficient switching applications. The transistor has a collector-base breakdown voltage of -15V and an emitter-base breakdown voltage of -6V. It operates effectively within a junction temperature range of -55¬8C to +150¬8C. The device is intended for low-frequency amplification and driver applications, providing a reliable option for engineers seeking a robust transistor solution.
Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Transistors | Transistors |
| Product Number | 2SB1690 | 2SB1690 |
| Product Name | PNP, SOT-346T, -12V -2A, Low VCE(sat) Transistor | PNP Low VCE(sat) Transistor |
| Polarity | PNP | PNP |
