ROHM Semiconductor GmbH PNP, TO-263AB, -80V -5A, Power Transistor 2SAR586J

Description
The power bipolar PNP transistor 2SAR586J is designed for driver circuits.
Description
The power bipolar PNP transistor 2SAR586J is designed for driver circuits.
Datasheet
Datasheet Summary
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The 2SAR586J is a PNP power transistor in a TO-263AB package, designed for low-frequency amplifier and power driver applications. It has a collector-emitter voltage rating of -80 V and a continuous collector current of -5 A. The collector-emitter saturation voltage is -320 mV maximum at I_C = -2 A and I_B = -100 mA. The DC current gain ranges from 120 to 390 at I_C = -500 mA and V_CE = -3 V. The junction temperature operates up to 150 ℃, with power dissipation of 40 W at T_C = 25 ℃. The device is complementary to the 2SCR586J NPN transistor.

Datasheet Summary
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The 2SAR586J is a PNP power transistor in a TO-263AB package, designed for low-frequency amplifier and power driver applications. It has a collector-emitter voltage rating of -80 V and a continuous collector current of -5 A. The collector-emitter saturation voltage is -320 mV maximum at I_C = -2 A and I_B = -100 mA. The DC current gain ranges from 120 to 390 at I_C = -500 mA and V_CE = -3 V. The junction temperature operates up to 150 ℃, with power dissipation of 40 W at T_C = 25 ℃. The device is complementary to the 2SCR586J NPN transistor.

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PNP, TO-263AB, -80V -5A, Power Transistor - 2SAR586J - ROHM Semiconductor GmbH
Willich, Germany
PNP, TO-263AB, -80V -5A, Power Transistor
2SAR586J
PNP, TO-263AB, -80V -5A, Power Transistor 2SAR586J
The power bipolar PNP transistor 2SAR586J is designed for driver circuits.

The power bipolar PNP transistor 2SAR586J is designed for driver circuits.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH
Product Category Power MOSFET
Product Number 2SAR586J
Product Name PNP, TO-263AB, -80V -5A, Power Transistor
PD 40000 milliwatts
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