ROHM Semiconductor GmbH NPN, SOT-723, 30V 400mA, Low VCE(sat) Transistor 2SD2696

Description
Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
Description
Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
Datasheet
Datasheet Summary
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The 2SD2696 is an NPN transistor housed in a SOT-723 package, designed for low-frequency amplification applications. It has a maximum collector-emitter voltage (VCEO) of 30V and can handle a collector current (IC) of up to 400mA, with a peak collector current (ICP) of 800mA. The transistor features a low collector-emitter saturation voltage (VCE(sat)), rated at a maximum of 300mV when operating at 100mA collector current and 2mA base current. With a power dissipation capability of 150mW and a junction temperature rating of up to 150°C, the 2SD2696 is suitable for various general-purpose small signal amplification tasks. The device also exhibits a DC current gain (hFE) ranging from 270 to 680 at a collector current of 100mA. Its compact size and efficient performance make it a viable option for engineers seeking reliable amplification solutions in their projects.

Datasheet Summary
Powered by GS/AI

The 2SD2696 is an NPN transistor housed in a SOT-723 package, designed for low-frequency amplification applications. It has a maximum collector-emitter voltage (VCEO) of 30V and can handle a collector current (IC) of up to 400mA, with a peak collector current (ICP) of 800mA. The transistor features a low collector-emitter saturation voltage (VCE(sat)), rated at a maximum of 300mV when operating at 100mA collector current and 2mA base current. With a power dissipation capability of 150mW and a junction temperature rating of up to 150°C, the 2SD2696 is suitable for various general-purpose small signal amplification tasks. The device also exhibits a DC current gain (hFE) ranging from 270 to 680 at a collector current of 100mA. Its compact size and efficient performance make it a viable option for engineers seeking reliable amplification solutions in their projects.

Suppliers

Company
Product
Description
Supplier Links
NPN, SOT-723, 30V 400mA, Low VCE(sat) Transistor - 2SD2696 - ROHM Semiconductor GmbH
Willich, Germany
NPN, SOT-723, 30V 400mA, Low VCE(sat) Transistor
2SD2696
NPN, SOT-723, 30V 400mA, Low VCE(sat) Transistor 2SD2696
Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.

Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.

Supplier's Site Datasheet
NPN Low VCE(sat) Transistor - 2SD2696 - ROHM Semiconductor USA, LLC
Santa Clara, CA, USA
NPN Low VCE(sat) Transistor
2SD2696
NPN Low VCE(sat) Transistor 2SD2696
Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.

Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH ROHM Semiconductor USA, LLC
Product Category Transistors Transistors
Product Number 2SD2696 2SD2696
Product Name NPN, SOT-723, 30V 400mA, Low VCE(sat) Transistor NPN Low VCE(sat) Transistor
Polarity NPN NPN
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