ROHM Semiconductor GmbH NPN, TO-263AB, 80V 5A, Power Transistor 2SCR586J

Description
2SCR586J is a power transistor with Low VCE(sat), suitable for low frequency amplifier.
Description
2SCR586J is a power transistor with Low VCE(sat), suitable for low frequency amplifier.
Datasheet
Datasheet Summary
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The 2SCR586J is an NPN power transistor in a TO-263AB package, rated for a collector-emitter voltage of 80 V and a continuous collector current of 5 A. It features a collector-emitter saturation voltage of 300 mV maximum at a collector current of 2 A and base current of 100 mA. The device is AEC-Q101 qualified and suitable for low frequency amplifier applications. It operates with a maximum junction temperature of 150 °C and has a power dissipation of 40 W at a case temperature of 25 °C.

Datasheet Summary
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The 2SCR586J is an NPN power transistor in a TO-263AB package, rated for a collector-emitter voltage of 80 V and a continuous collector current of 5 A. It features a collector-emitter saturation voltage of 300 mV maximum at a collector current of 2 A and base current of 100 mA. The device is AEC-Q101 qualified and suitable for low frequency amplifier applications. It operates with a maximum junction temperature of 150 °C and has a power dissipation of 40 W at a case temperature of 25 °C.

Suppliers

Company
Product
Description
Supplier Links
NPN, TO-263AB, 80V 5A, Power Transistor - 2SCR586J - ROHM Semiconductor GmbH
Willich, Germany
NPN, TO-263AB, 80V 5A, Power Transistor
2SCR586J
NPN, TO-263AB, 80V 5A, Power Transistor 2SCR586J
2SCR586J is a power transistor with Low VCE(sat), suitable for low frequency amplifier.

2SCR586J is a power transistor with Low VCE(sat), suitable for low frequency amplifier.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH
Product Category Power MOSFET
Product Number 2SCR586J
Product Name NPN, TO-263AB, 80V 5A, Power Transistor
PD 40000 milliwatts
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