The Sic MOSFET, Dual N Channel, 1.2kV, 400A from ROHM is designed for high-performance applications such as motor drives, inverters, converters, photovoltaics, wind power generation, and induction heating equipment. This product features low surge and low switching loss, enabling high-speed switching capabilities while reducing temperature dependence. The module consists of SiC-DMOSFET and SiC-SBD, providing robust performance with a maximum drain-source voltage of 1200V and a maximum drain current of 400A. It has a maximum junction temperature of 175¬8C and operates within a storage temperature range of -40¬8C to 150¬8C. The device is RoHS compliant, ensuring it meets environmental regulations. Engineers considering this product should note its suitability for applications requiring efficient power management and high reliability under demanding conditions.
BSM400D12P2G003 is a half-bridge module consisting of SiC-DMOSFET and SiC-SBD, suitable for motor drive, inverter, converter, photovoltaics, wind power generation, induction heating equipment.
Mosfet Array 2 N-Channel (Half Bridge) 1200V (1.2kV) 400A (Tc) 2450W (Tc) Module
SIC 2N-CH 1200V 400A MODULE
SIC MOSFET, DUAL N CHANNEL, 1.2KV, 400A ROHS COMPLIANT: YES
| ROHM Semiconductor GmbH | DigiKey | Acme Chip Technology Co., Limited | Newark, An Avnet Company | |
|---|---|---|---|---|
| Product Category | Power MOSFET | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BSM400D12P2G003 | 846-BSM400D12P2G003-ND | BSM400D12P2G003 | 88AH6168 |
| Product Name | 1200V, 397A, Half bridge, Silicon-carbide (SiC) Power Module | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Sic Mosfet, Dual N Channel, 1.2Kv, 400A Rohs Compliant Rohm |
| V(BR)DSS | 1200 volts | |||
| IDSS | 397000 milliamps | |||
| PD | 2.45E6 milliwatts | |||
| TJ | -40 to 125 C (-40 to 257 F) |
