ROHM Semiconductor GmbH NPN, TO-252 (DPAK), 50V 7A, Power Transistor 2SCR583D3

2SCR583D3 is an NPN silicon power transistor in a TO-252 (DPAK) package, rated for 50 V collector-emitter voltage and 7 A continuous collector current. It has a maximum collector-emitter saturation voltage of 350 mV at a collector current of 3 A and base current of 150 mA, with a DC current gain ranging from 180 to 450 at 1 A collector current. The device supports a maximum power dissipation of 10 W at 25°C case temperature and a junction temperature up to 150°C. It is designed for low-frequency amplifier and power driver applications, with a transition frequency of 280 MHz and output capacitance of 65 pF at 10 V collector-base voltage. The transistor is RoHS compliant and meets AEC-Q200 automotive qualification standards.