The IPB65R155CFD7 is a 650V CoolMOS™ CFD7 superjunction MOSFET in a D²PAK (PG-TO263-3) package, designed for high-efficiency resonant switching topologies such as LLC and phase-shift full-bridge (ZVS) in industrial applications like server, telecom, EV charging, and solar power systems. It features a 155 mΩ maximum RDS(on), a 55 A pulsed drain current, a 1300 A/µs body diode di/dt, and a 64 mJ single-pulse avalanche energy rating. The device meets JEDEC industrial application qualifications and offers reduced switching losses, low gate charge, and enhanced hard commutation robustness. It supports operation from -55°C to 150°C junction temperature with a maximum power dissipation of 77 W at 25°C case temperature.
The 650V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies
Infineon’s 650V CoolMOS™ CFD7 superjunction MOSFET IPB65R155CFD7 in a D2PAK-package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behavior, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50V breakdown voltage.
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| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPB65R155CFD7 |
| Product Name | 500V-950V N-Channel Power MOSFET |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.1550 ohms |
| QG | 28 nC |
