Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPD50R380CE

Description
500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market. Summary of Features Reduced energy stored in output capacitance (E oss) High body diode ruggedness Reduced reverse recovery charge (Q rr ) Reduced gate charge (Q g ) Benefits Easy control of switching behavior Better light load efficiency compared to previous CoolMOS™ generations Cost attractive alternative compared to standard MOSFETs Outstanding quality and reliability of CoolMOS™ technology Potential Applications Consumer Lighting PC silverbox Applications Solid-State Circuit Breaker Designers who used this product also designed with 2EDR8259X | Gate driver ICs 1EDB8275F | Gate driver ICs 2EDR8259X | Gate driver ICs 1EDB8275F | Gate driver ICs 2EDR8259X | Gate driver ICs 1EDB8275F | Gate driver ICs
  • 500V-950V N-Channel Power MOSFET - IPD50R380CE - Infineon Technologies AG
    Infineon Technologies AG
  • Electronic Surplus - IPD50R380CE - 1186153-IPD50R380CE - Win Source Electronics
    Win Source Electronics
  • Transistors - IPD50R380CE - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote Datasheet
Description
500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market. Summary of Features Reduced energy stored in output capacitance (E oss) High body diode ruggedness Reduced reverse recovery charge (Q rr ) Reduced gate charge (Q g ) Benefits Easy control of switching behavior Better light load efficiency compared to previous CoolMOS™ generations Cost attractive alternative compared to standard MOSFETs Outstanding quality and reliability of CoolMOS™ technology Potential Applications Consumer Lighting PC silverbox Applications Solid-State Circuit Breaker Designers who used this product also designed with 2EDR8259X | Gate driver ICs 1EDB8275F | Gate driver ICs 2EDR8259X | Gate driver ICs 1EDB8275F | Gate driver ICs 2EDR8259X | Gate driver ICs 1EDB8275F | Gate driver ICs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
500V-950V N-Channel Power MOSFET - IPD50R380CE - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPD50R380CE
500V-950V N-Channel Power MOSFET IPD50R380CE
500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market. Summary of Features Reduced energy stored in output capacitance (E oss) High body diode ruggedness Reduced reverse recovery charge (Q rr ) Reduced gate charge (Q g ) Benefits Easy control of switching behavior Better light load efficiency compared to previous CoolMOS™ generations Cost attractive alternative compared to standard MOSFETs Outstanding quality and reliability of CoolMOS™ technology Potential Applications Consumer Lighting PC silverbox Applications Solid-State Circuit Breaker Designers who used this product also designed with 2EDR8259X | Gate driver ICs 1EDB8275F | Gate driver ICs 2EDR8259X | Gate driver ICs 1EDB8275F | Gate driver ICs 2EDR8259X | Gate driver ICs 1EDB8275F | Gate driver ICs

500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.


Summary of Features

  • Reduced energy stored in output capacitance (E oss)
  • High body diode ruggedness
  • Reduced reverse recovery charge (Q rr )
  • Reduced gate charge (Q g )

Benefits

  • Easy control of switching behavior
  • Better light load efficiency compared to previous CoolMOS™ generations
  • Cost attractive alternative compared to standard MOSFETs
  • Outstanding quality and reliability of CoolMOS™ technology

Potential Applications

  • Consumer
  • Lighting
  • PC silverbox

Applications

  • Solid-State Circuit Breaker

Designers who used this product also designed with


  • 2EDR8259X |
    Gate driver ICs
  • 1EDB8275F |
    Gate driver ICs
  • 2EDR8259X |
    Gate driver ICs
  • 1EDB8275F |
    Gate driver ICs
  • 2EDR8259X |
    Gate driver ICs
  • 1EDB8275F |
    Gate driver ICs
Supplier's Site Datasheet
Electronic Surplus - IPD50R380CE - 1186153-IPD50R380CE - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Electronic Surplus - IPD50R380CE
1186153-IPD50R380CE
Electronic Surplus - IPD50R380CE 1186153-IPD50R380CE
Manufacturer: Infineon Technologies Win Source Part Number: 1186153-IPD50R380CE Manufacturer Homepage: www.infineon.com Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1186153-IPD50R380CE
Manufacturer Homepage: www.infineon.com
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance

Buy Now
Transistors - IPD50R380CE - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
IPD50R380CE
Transistors IPD50R380CE
550V 14.1A 350mΩ@13V,3.2A 98W 3V@260uA 1 N-Channel TO-252 MOSFETs ROHS

550V 14.1A 350mΩ@13V,3.2A 98W 3V@260uA 1 N-Channel TO-252 MOSFETs ROHS

Supplier's Site

Technical Specifications

  Infineon Technologies AG Win Source Electronics ODG (Origin Data Global)
Product Category Power MOSFET Power MOSFET Transistors
Product Number IPD50R380CE 1186153-IPD50R380CE IPD50R380CE
Product Name 500V-950V N-Channel Power MOSFET Electronic Surplus - IPD50R380CE Transistors
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.3800 ohms
QG 24.8 nC
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