The IPD50R380CE is a 500V CoolMOS™ CE N-channel power MOSFET optimized for cost-sensitive consumer and lighting applications, offering high efficiency and ease of use. It is packaged in a PG-TO 252 (DPAK) case with a maximum continuous drain current of 14.1 A and a drain-source on-resistance of 0.38 Ω. The device features a gate charge of 24.8 nC and an output energy storage of 2.54 µJ at 400 V. It is qualified for standard grade applications, supports a maximum junction temperature of 150 °C, and has a thermal resistance from junction to case of 1.27 °C/W. The MOSFET exhibits high commutation ruggedness and is halogen-free with lead-free plating.
500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.
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Manufacturer: Infineon Technologies
Win Source Part Number: 1186153-IPD50R380CE
Manufacturer Homepage: www.infineon.com
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance
550V 14.1A 350mΩ@13V,3.2A 98W 3V@260uA 1 N-Channel TO-252 MOSFETs ROHS
| Infineon Technologies AG | Win Source Electronics | ODG (Origin Data Global) | |
|---|---|---|---|
| Product Category | Power MOSFET | Power MOSFET | Transistors |
| Product Number | IPD50R380CE | 1186153-IPD50R380CE | IPD50R380CE |
| Product Name | 500V-950V N-Channel Power MOSFET | Electronic Surplus - IPD50R380CE | Transistors |
| Polarity | N-Channel; N | ||
| Transistor Technology / Material | Si/SiC | ||
| rDS(on) | 0.3800 ohms | ||
| QG | 24.8 nC |
