Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPAN60R125PFD7S

Description
600V CoolMOS™ PFD7 superjunction MOSFET in TO-220 FullPAK narrow-lead package The 600V CoolMOS™ PFD7 superjunction MOSFET (IPAN60R125PFD7S) complements the CoolMOS™ 7 offering for consumer applications. The IPAN60R125PFD7S in a TO-220 FullPAK narrow-lead package features RDS(on) of 125mOhm leading to low switching losses. The products come with a fast body diode ensuring a robust device and in turn reduced bill-of-material (BOM) for the customer. This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600V CoolMOS™ PFD7 offers improved light- and full-load efficiency over CoolMOS™ P7 and CE MOSFET technologies resulting in an increase in power density by 1.8W/inch3. Summary of Features Very low FOM RDS(on) x Eoss Integrated robust fast body diode Up to 2kV ESD protection Wide range of RDS(on) values Excellent commutation ruggedness Low EMI Broad package portfolio Benefits Minimized switching losses Power density improvement compared to latest CoolMOS™ charger technology Increased efficiency and improved thermal behavior compared to CoolMOS™ CE technology for low power drives applications BOM cost reduction and easy manufacturing Robustness and reliability Easy to select the right parts for design fine-tuning Potential Applications Consumer High density Charger and Adapter USB PD Fridge Fans Pumps Applications Complete system solutions for smart TVs Cordless power tools and outdoor power equipment DIN rail power supplies LED lighting system designs Designers who used this product also designed with 1ED44171N01B | Gate driver ICs 1EDI20N12AF | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 2EDR8259X | Gate driver ICs 2ED2110S06M | Gate driver ICs 2ED2184S06F | Gate driver ICs 1ED44171N01B | Gate driver ICs 1EDI20N12AF | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 2EDR8259X | Gate driver ICs 2ED2110S06M | Gate driver ICs 2ED2184S06F | Gate driver ICs 1ED44171N01B | Gate driver ICs 1EDI20N12AF | Gate driver ICs 1 2
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Description
600V CoolMOS™ PFD7 superjunction MOSFET in TO-220 FullPAK narrow-lead package The 600V CoolMOS™ PFD7 superjunction MOSFET (IPAN60R125PFD7S) complements the CoolMOS™ 7 offering for consumer applications. The IPAN60R125PFD7S in a TO-220 FullPAK narrow-lead package features RDS(on) of 125mOhm leading to low switching losses. The products come with a fast body diode ensuring a robust device and in turn reduced bill-of-material (BOM) for the customer. This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600V CoolMOS™ PFD7 offers improved light- and full-load efficiency over CoolMOS™ P7 and CE MOSFET technologies resulting in an increase in power density by 1.8W/inch3. Summary of Features Very low FOM RDS(on) x Eoss Integrated robust fast body diode Up to 2kV ESD protection Wide range of RDS(on) values Excellent commutation ruggedness Low EMI Broad package portfolio Benefits Minimized switching losses Power density improvement compared to latest CoolMOS™ charger technology Increased efficiency and improved thermal behavior compared to CoolMOS™ CE technology for low power drives applications BOM cost reduction and easy manufacturing Robustness and reliability Easy to select the right parts for design fine-tuning Potential Applications Consumer High density Charger and Adapter USB PD Fridge Fans Pumps Applications Complete system solutions for smart TVs Cordless power tools and outdoor power equipment DIN rail power supplies LED lighting system designs Designers who used this product also designed with 1ED44171N01B | Gate driver ICs 1EDI20N12AF | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 2EDR8259X | Gate driver ICs 2ED2110S06M | Gate driver ICs 2ED2184S06F | Gate driver ICs 1ED44171N01B | Gate driver ICs 1EDI20N12AF | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 2EDR8259X | Gate driver ICs 2ED2110S06M | Gate driver ICs 2ED2184S06F | Gate driver ICs 1ED44171N01B | Gate driver ICs 1EDI20N12AF | Gate driver ICs 1 2
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Suppliers

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Supplier Links
500V-950V N-Channel Power MOSFET - IPAN60R125PFD7S - Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPAN60R125PFD7S
500V-950V N-Channel Power MOSFET IPAN60R125PFD7S
600V CoolMOS™ PFD7 superjunction MOSFET in TO-220 FullPAK narrow-lead package The 600V CoolMOS™ PFD7 superjunction MOSFET (IPAN60R125PFD7S) complements the CoolMOS™ 7 offering for consumer applications. The IPAN60R125PFD7S in a TO-220 FullPAK narrow-lead package features RDS(on) of 125mOhm leading to low switching losses. The products come with a fast body diode ensuring a robust device and in turn reduced bill-of-material (BOM) for the customer. This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600V CoolMOS™ PFD7 offers improved light- and full-load efficiency over CoolMOS™ P7 and CE MOSFET technologies resulting in an increase in power density by 1.8W/inch3. Summary of Features Very low FOM RDS(on) x Eoss Integrated robust fast body diode Up to 2kV ESD protection Wide range of RDS(on) values Excellent commutation ruggedness Low EMI Broad package portfolio Benefits Minimized switching losses Power density improvement compared to latest CoolMOS™ charger technology Increased efficiency and improved thermal behavior compared to CoolMOS™ CE technology for low power drives applications BOM cost reduction and easy manufacturing Robustness and reliability Easy to select the right parts for design fine-tuning Potential Applications Consumer High density Charger and Adapter USB PD Fridge Fans Pumps Applications Complete system solutions for smart TVs Cordless power tools and outdoor power equipment DIN rail power supplies LED lighting system designs Designers who used this product also designed with 1ED44171N01B | Gate driver ICs 1EDI20N12AF | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 2EDR8259X | Gate driver ICs 2ED2110S06M | Gate driver ICs 2ED2184S06F | Gate driver ICs 1ED44171N01B | Gate driver ICs 1EDI20N12AF | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 2EDR8259X | Gate driver ICs 2ED2110S06M | Gate driver ICs 2ED2184S06F | Gate driver ICs 1ED44171N01B | Gate driver ICs 1EDI20N12AF | Gate driver ICs 1 2

600V CoolMOS™ PFD7 superjunction MOSFET in TO-220 FullPAK narrow-lead package

The 600V CoolMOS™ PFD7 superjunction MOSFET (IPAN60R125PFD7S) complements the CoolMOS™ 7 offering for consumer applications. The IPAN60R125PFD7S in a TO-220 FullPAK narrow-lead package features RDS(on) of 125mOhm leading to low switching losses. The products come with a fast body diode ensuring a robust device and in turn reduced bill-of-material (BOM) for the customer.

This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600V CoolMOS™ PFD7 offers improved light- and full-load efficiency over CoolMOS™ P7 and CE MOSFET technologies resulting in an increase in power density by 1.8W/inch3.


Summary of Features

  • Very low FOM RDS(on) x Eoss
  • Integrated robust fast body diode
  • Up to 2kV ESD protection
  • Wide range of RDS(on) values
  • Excellent commutation ruggedness
  • Low EMI
  • Broad package portfolio

Benefits

  • Minimized switching losses
  • Power density improvement compared to latest CoolMOS™ charger technology
  • Increased efficiency and improved thermal behavior compared to CoolMOS™ CE technology for low power drives applications
  • BOM cost reduction and easy manufacturing
  • Robustness and reliability
  • Easy to select the right parts for design fine-tuning

Potential Applications

  • Consumer
  • High density Charger and Adapter
  • USB PD
  • Fridge
  • Fans
  • Pumps

Applications

  • Complete system solutions for smart TVs
  • Cordless power tools and outdoor power equipment
  • DIN rail power supplies
  • LED lighting system designs

Designers who used this product also designed with


  • 1ED44171N01B |
    Gate driver ICs
  • 1EDI20N12AF |
    Gate driver ICs
  • 2EDL23N06PJ |
    Gate driver ICs
  • 2EDR8259X |
    Gate driver ICs
  • 2ED2110S06M |
    Gate driver ICs
  • 2ED2184S06F |
    Gate driver ICs
  • 1ED44171N01B |
    Gate driver ICs
  • 1EDI20N12AF |
    Gate driver ICs
  • 2EDL23N06PJ |
    Gate driver ICs
  • 2EDR8259X |
    Gate driver ICs
  • 2ED2110S06M |
    Gate driver ICs
  • 2ED2184S06F |
    Gate driver ICs
  • 1ED44171N01B |
    Gate driver ICs
  • 1EDI20N12AF |
    Gate driver ICs

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Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IPAN60R125PFD7S
Product Name 500V-950V N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.1250 ohms
QG 36 nC
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