Infineon Technologies AG BUZ76A

BUZ76A is an N-channel enhancement mode MOSFET rated for 400 V drain-source breakdown voltage and 2.7 A continuous drain current, packaged in a TO-220 AB case. It features avalanche ruggedness with 180 mJ single-pulse avalanche energy and a maximum junction temperature of 150 °C. Thermal resistance from junction to case is 3.1 K/W, and junction-to-ambient is 75 K/W. The device complies with DIN 40040 E humidity category and IEC 68-1 55/150/56 climatic classification. Gate threshold voltage ranges from 2.1 V to 4 V, and drain-source on-resistance is up to 2.5 Ø at 10 V gate-source voltage.