Win Source Part Number: 1065231-IPB80P04P4L0
Category: Discrete Semiconductor Products>Transistors
Series: OptiMOS®-P2
Package: Tape & Reel
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 150µA
Power Dissipation (Max): 88W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3-2
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 25 V
Vgs (Max): +5V, -16V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): IPB80N06S4L07ATMA2; IPB80N06S4L05ATMA2; IPB050N06NGATMA1; FDB8896; FDB8896-F085; FDB8444IPB80P04P4L-0
ECCN: EAR99
Fake Threat In the Open Market: 46 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: 448-IPB80P04P4L06ATM
Base Product Number: IPB80P
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
INFINEON MOSFET IPB80P04P4L06ATMA2
INFINEON MOSFET IPB80P04P4L06ATMA2
INFINEON MOSFET IPB80P04P4L06ATMA2
MOSFET P-CH 40V 80A TO263-3 Product overview: IPB80P04P4L06ATMA2 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 80A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 80A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB80P04P4L06ATM
Power Field-Effect Transistor
P-Channel 40V 80A (Tc) 88W (Tc) Surface Mount PG-TO263-3-2
P-Channel 40V 80A (Tc) 88W (Tc) Surface Mount PG-TO263-3-2
P-Channel 40V 80A (Tc) 88W (Tc) Surface Mount PG-TO263-3-2
MOSFET P-CH 40V 80A TO263-3
MOSFET, AEC-Q101, P-CH, -40V, -80A, 88W ROHS COMPLIANT: YES
| Win Source Electronics | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Rochester Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1065231-IPB80P04P4L06ATMA2 | 2583819 | 278-IPB80P04P4L06ATMA2 | IPB80P04P4L06ATMA2 | 448-IPB80P04P4L06ATMA2DKR-ND | IPB80P04P4L06ATMA2 | 51AH5903 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFETs | 40V 80A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Aec-Q101, P-Ch, -40V, -80A, 88W Rohs Compliant Infineon | |
| Polarity | P-Channel | P-Channel | P-Channel | ||||
| PD | 88000 milliwatts | 88 milliwatts | |||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||||
| Package Type | SOT3 | TO-263; TO-263 | Tape & Reel (TR) | PG-TO263-3 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-3 |
