MOSFET N-CH 120V 120A D2PAK Product overview: IPB038N12N3GATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 120V, 120A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 120V, 120A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB038N12N3GATMA
Manufacturer: Infineon Technologies
Win Source Part Number: 874691-IPB038N12N3GA
Series: OptiMOS™
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: N-Channel 120 V 120A (Tc) 300W (Tc) Surface Mount PG-TO263-3
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Package: Reel - TR
Mounting: Surface Mount
Family Name: IPB038
Categories: Discrete Semiconductor Products
Case / Package: PG-TO263-3
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Limited
Quantity per package: 1000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 46 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: IPB038N12N3 GTR, IPB038N12N3 GCT, IPB038N12N3 G, IPB038N12N3G, IPB038N12N3GATMA1CT,
N-Channel 120V 120A (Tc) 300W (Tc) Surface Mount PG-TO263-3
N-Channel 120V 120A (Tc) 300W (Tc) Surface Mount PG-TO263-3
N-Channel 120V 120A (Tc) 300W (Tc) Surface Mount PG-TO263-3
Power Field-Effect Transistor, 120A I(D), 120V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET N-CH 120V 120A D2PAK
MOSFET N-Ch 120V 120A D2PAK-2 OptiMOS 3
MOSFET, N CHANNEL, 120V, 120A, TO263-3; Channel Type:N Channel; Drain Source Voltage Vds:120V; Continuous Drain Current Id:120A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
MOSFET N-CH 120V 120A D2PAK
| ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | Win Source Electronics | DigiKey | Rochester Electronics | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-IPB038N12N3GATMA1 | 2591545 | 874691-IPB038N12N3GATMA1 | IPB038N12N3GATMA1DKR-ND | IPB038N12N3GATMA1 | IPB038N12N3GATMA1 | IPB038N12N3GATMA1 | 47W3464 | IPB038N12N3GATMA1 |
| Product Name | 120V 120A MOSFET Transistor | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB038N12N3GATMA1 | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Mosfet, N Channel, 120V, 120A, To263-3; Channel Type Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||||
| V(BR)DSS | 120 volts | 120 volts | |||||||
| Transconductance | 0.0830 kS | ||||||||
| PD | 300 milliwatts | 300000 milliwatts |
