N-Channel 650V 16A (Tc) 34W (Tc) Through Hole PG-TO220-3-31
IPA60R199 - 600V CoolMOS N-Channel Power MOSFET
MOSFET N-CH 650V 16A TO220-FP
MOSFET, N CHANNEL, 650V, 16A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:16A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; MSL:- RoHS Compliant: Yes
MOSFET N-CH 650V 16A TO220-3
| DigiKey | Rochester Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Utmel Electronic Limited | |
|---|---|---|---|---|---|
| Product Category | Transistors | Power MOSFET | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPA60R199CPXKSA1-ND | IPA60R199CPXKSA1 | IPA60R199CPXKSA1 | 33P7116 | 376-IPA60R199CPXKSA1 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N Channel, 650V, 16A, To-220; Channel Type Infineon | MOSFET N-CH 650V 16A TO220-3 | |
| Polarity | N-Channel | N-Channel | N-Channel | ||
| Package Type | TO-220; TO-220-3 Full Pack | PG-TO22-3 | TO-220; TO-220-3 Full Pack | TO-3; TO-220 | |
| Packing Method | Tube; Tube | Tube; Tube | Tube; Tube | ||
| IDSS | 16000 milliamps | ||||
| Transistor Technology / Material | SILICON |
