Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPA50R190CE

Description
500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market. Summary of Features Reduced energy stored in output capacitance (E oss) High body diode ruggedness Reduced reverse recovery charge (Q rr ) Reduced gate charge (Q g ) Benefits Easy control of switching behavior Better light load efficiency compared to previous CoolMOS™ generations Cost attractive alternative compared to standard MOSFETs Outstanding quality and reliability of CoolMOS™ technology Potential Applications Consumer Lighting PC silverbox Designers who used this product also designed with 1EDI20N12AF | Gate driver ICs 2EDR8259X | Gate driver ICs 1EDI20N12AF | Gate driver ICs 2EDR8259X | Gate driver ICs 1EDI20N12AF | Gate driver ICs 2EDR8259X | Gate driver ICs
  • 500V-950V N-Channel Power MOSFET - IPA50R190CE - Infineon Technologies AG
    Infineon Technologies AG
  • Single FETs, MOSFETs - IPA50R190CE-ND - DigiKey
    DigiKey
  • Electronic Surplus - IPA50R190CE - 1185970-IPA50R190CE - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IPA50R190CE - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPA50R190CE - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market. Summary of Features Reduced energy stored in output capacitance (E oss) High body diode ruggedness Reduced reverse recovery charge (Q rr ) Reduced gate charge (Q g ) Benefits Easy control of switching behavior Better light load efficiency compared to previous CoolMOS™ generations Cost attractive alternative compared to standard MOSFETs Outstanding quality and reliability of CoolMOS™ technology Potential Applications Consumer Lighting PC silverbox Designers who used this product also designed with 1EDI20N12AF | Gate driver ICs 2EDR8259X | Gate driver ICs 1EDI20N12AF | Gate driver ICs 2EDR8259X | Gate driver ICs 1EDI20N12AF | Gate driver ICs 2EDR8259X | Gate driver ICs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
500V-950V N-Channel Power MOSFET - IPA50R190CE - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPA50R190CE
500V-950V N-Channel Power MOSFET IPA50R190CE
500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market. Summary of Features Reduced energy stored in output capacitance (E oss) High body diode ruggedness Reduced reverse recovery charge (Q rr ) Reduced gate charge (Q g ) Benefits Easy control of switching behavior Better light load efficiency compared to previous CoolMOS™ generations Cost attractive alternative compared to standard MOSFETs Outstanding quality and reliability of CoolMOS™ technology Potential Applications Consumer Lighting PC silverbox Designers who used this product also designed with 1EDI20N12AF | Gate driver ICs 2EDR8259X | Gate driver ICs 1EDI20N12AF | Gate driver ICs 2EDR8259X | Gate driver ICs 1EDI20N12AF | Gate driver ICs 2EDR8259X | Gate driver ICs

500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.


Summary of Features

  • Reduced energy stored in output capacitance (E oss)
  • High body diode ruggedness
  • Reduced reverse recovery charge (Q rr )
  • Reduced gate charge (Q g )

Benefits

  • Easy control of switching behavior
  • Better light load efficiency compared to previous CoolMOS™ generations
  • Cost attractive alternative compared to standard MOSFETs
  • Outstanding quality and reliability of CoolMOS™ technology

Potential Applications

  • Consumer
  • Lighting
  • PC silverbox

Designers who used this product also designed with


  • 1EDI20N12AF |
    Gate driver ICs
  • 2EDR8259X |
    Gate driver ICs
  • 1EDI20N12AF |
    Gate driver ICs
  • 2EDR8259X |
    Gate driver ICs
  • 1EDI20N12AF |
    Gate driver ICs
  • 2EDR8259X |
    Gate driver ICs
Supplier's Site Datasheet
Single FETs, MOSFETs - IPA50R190CE-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPA50R190CE-ND
Single FETs, MOSFETs IPA50R190CE-ND
N-Channel 500V 18.5A (Tc) 32W (Tc) Through Hole PG-TO220-FP

N-Channel 500V 18.5A (Tc) 32W (Tc) Through Hole PG-TO220-FP

Buy Now Datasheet
Electronic Surplus - IPA50R190CE - 1185970-IPA50R190CE - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Electronic Surplus - IPA50R190CE
1185970-IPA50R190CE
Electronic Surplus - IPA50R190CE 1185970-IPA50R190CE
Manufacturer: Infineon Technologies Win Source Part Number: 1185970-IPA50R190CE Packaging: Tube Mounting Style: Through Hole Technology: MOSFET FET Feature: Super Junction Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: PG-TO220-FP Drive Voltage (Max Rds On, Min Rds On): 13V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.infineon.com Manufacturer Package: TO-220-3 Full Pack Power Dissipation (Maximum): 32W Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 500 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 500V Id - Continuous Drain Current: 18.5A Rds On (Maximum) at Id, Vgs: 190mOhm at 6.2A, 13V Gate Source Voltage(th) (Maximum) at Id: 3.5V at 510μA Gate Charge (Qg) (Maximum) at Vgs: 47.2nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 1137pF at 100V

Manufacturer: Infineon Technologies
Win Source Part Number: 1185970-IPA50R190CE
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
FET Feature: Super Junction
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 13V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.infineon.com
Manufacturer Package: TO-220-3 Full Pack
Power Dissipation (Maximum): 32W
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 500
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 500V
Id - Continuous Drain Current: 18.5A
Rds On (Maximum) at Id, Vgs: 190mOhm at 6.2A, 13V
Gate Source Voltage(th) (Maximum) at Id: 3.5V at 510μA
Gate Charge (Qg) (Maximum) at Vgs: 47.2nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 1137pF at 100V

Buy Now
Single FETs, MOSFETs - IPA50R190CE - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IPA50R190CE
Single FETs, MOSFETs IPA50R190CE
MOSFET N-CH 500V 18.5A TO220-FP

MOSFET N-CH 500V 18.5A TO220-FP

Supplier's Site Datasheet
LCSC Electronics Technology (HK) Limited
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
IPA50R190CE
Triode/MOS Tube/Transistor >> MOSFETs IPA50R190CE
TO-220-3 MOSFETs ROHS

TO-220-3 MOSFETs ROHS

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPA50R190CE - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPA50R190CE
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPA50R190CE
MOSFET N-CH 500V 18.5A TO220-FP

MOSFET N-CH 500V 18.5A TO220-FP

Supplier's Site

Technical Specifications

  Infineon Technologies AG DigiKey Win Source Electronics ODG (Origin Data Global) LCSC Electronics Technology (HK) Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IPA50R190CE IPA50R190CE-ND 1185970-IPA50R190CE IPA50R190CE IPA50R190CE IPA50R190CE
Product Name 500V-950V N-Channel Power MOSFET Single FETs, MOSFETs Electronic Surplus - IPA50R190CE Single FETs, MOSFETs Triode/MOS Tube/Transistor >> MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N N-Channel N-Channel; N-Channel N-Channel; N-Channel
Transistor Technology / Material Si/SiC MOSFET (Metal Oxide)
rDS(on) 0.1900 ohms
QG 47.2 nC 47.2 nC
TJ -40 to 150 C (-40 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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