500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.
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Manufacturer: Infineon Technologies
Win Source Part Number: 1185970-IPA50R190CE
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
FET Feature: Super Junction
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 13V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.infineon.com
Manufacturer Package: TO-220-3 Full Pack
Power Dissipation (Maximum): 32W
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 500
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 500V
Id - Continuous Drain Current: 18.5A
Rds On (Maximum) at Id, Vgs: 190mOhm at 6.2A, 13V
Gate Source Voltage(th) (Maximum) at Id: 3.5V at 510μA
Gate Charge (Qg) (Maximum) at Vgs: 47.2nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 1137pF at 100V
MOSFET N-CH 500V 18.5A TO220-FP
N-Channel 500V 18.5A (Tc) 32W (Tc) Through Hole PG-TO220-FP
MOSFET N-CH 500V 18.5A TO220-FP
TO-220-3 MOSFETs ROHS
| Infineon Technologies AG | Win Source Electronics | ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPA50R190CE | 1185970-IPA50R190CE | IPA50R190CE | IPA50R190CE-ND | IPA50R190CE | IPA50R190CE |
| Product Name | 500V-950V N-Channel Power MOSFET | Electronic Surplus - IPA50R190CE | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | N-Channel; N | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||
| Transistor Technology / Material | Si/SiC | MOSFET (Metal Oxide) | ||||
| rDS(on) | 0.1900 ohms | |||||
| QG | 47.2 nC | 47.2 nC | ||||
| TJ | -40 to 150 C (-40 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |