Infineon Technologies AG MOSFETs IPD122N10N3GATMA1

Description
INFINEON MOSFET IPD122N10N3GATMA1
Request a Quote Datasheet
Description
INFINEON MOSFET IPD122N10N3GATMA1
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
MOSFETs - 2583833 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2583833
MOSFETs 2583833
INFINEON MOSFET IPD122N10N3GATMA1

INFINEON MOSFET IPD122N10N3GATMA1

Supplier's Site
MOSFETs - 2583832 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2583832
MOSFETs 2583832
INFINEON MOSFET IPD122N10N3GATMA1

INFINEON MOSFET IPD122N10N3GATMA1

Supplier's Site
MOSFETs - 2583833P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2583833P
MOSFETs 2583833P
INFINEON MOSFET IPD122N10N3GATMA1

INFINEON MOSFET IPD122N10N3GATMA1

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD122N10N3GATMA1 - 1001298-IPD122N10N3GATMA1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD122N10N3GATMA1
1001298-IPD122N10N3GATMA1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD122N10N3GATMA1 1001298-IPD122N10N3GATMA1
Manufacturer: Infineon Technologies Win Source Part Number: 1001298-IPD122N10N3G ATMA1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 94W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO252-3 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 59A (Tc) Gate-Source Threshold Voltage: 3.5V @ 46μA Max Gate Charge: 35nC @ 10V Max Input Capacitance: 2500pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 12.2 mOhm @ 46A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1001298-IPD122N10N3GATMA1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 94W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO252-3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 59A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 46μA
Max Gate Charge: 35nC @ 10V
Max Input Capacitance: 2500pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 12.2 mOhm @ 46A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IPD122N10N3GATMA1DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPD122N10N3GATMA1DKR-ND
Single FETs, MOSFETs IPD122N10N3GATMA1DKR-ND
N-Channel 100V 59A (Tc) 94W (Tc) Surface Mount PG-TO252-3

N-Channel 100V 59A (Tc) 94W (Tc) Surface Mount PG-TO252-3

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Single FETs, MOSFETs - IPD122N10N3GATMA1CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPD122N10N3GATMA1CT-ND
Single FETs, MOSFETs IPD122N10N3GATMA1CT-ND
N-Channel 100V 59A (Tc) 94W (Tc) Surface Mount PG-TO252-3

N-Channel 100V 59A (Tc) 94W (Tc) Surface Mount PG-TO252-3

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Single FETs, MOSFETs - IPD122N10N3GATMA1TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPD122N10N3GATMA1TR-ND
Single FETs, MOSFETs IPD122N10N3GATMA1TR-ND
N-Channel 100V 59A (Tc) 94W (Tc) Surface Mount PG-TO252-3

N-Channel 100V 59A (Tc) 94W (Tc) Surface Mount PG-TO252-3

Buy Now Datasheet
Singapore, Singapore
100V 59A TO252 MOSFET Transistor
278-IPD122N10N3GATMA1
100V 59A TO252 MOSFET Transistor 278-IPD122N10N3GATMA1
MOSFET N-CH 100V 59A TO252-3 Product overview: IPD122N10N3GATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 59A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 59A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD122N10N3GATMA 1 can be used for catalog matching and distributor lookup.

MOSFET N-CH 100V 59A TO252-3 Product overview: IPD122N10N3GATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 59A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 59A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD122N10N3GATMA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
 - IPD122N10N3GATMA1 - Rochester Electronics
Newburyport, MA, United States
IPD122N10N3 G - OptiMOS 3 Power-Transistor

IPD122N10N3 G - OptiMOS 3 Power-Transistor

Supplier's Site Datasheet
Mosfet, N-Ch, 100V, 59A, 175Deg C, 94W; Channel Type Infineon - 85X6027 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 100V, 59A, 175Deg C, 94W; Channel Type Infineon
85X6027
Mosfet, N-Ch, 100V, 59A, 175Deg C, 94W; Channel Type Infineon 85X6027
MOSFET, N-CH, 100V, 59A, 175DEG C, 94W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:59A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.7V RoHS Compliant: Yes

MOSFET, N-CH, 100V, 59A, 175DEG C, 94W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:59A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.7V RoHS Compliant: Yes

Supplier's Site Datasheet
Transistor - 108066204 - Radwell International
Willingboro, NJ, United States
Transistor
108066204
Transistor 108066204
(PRICE/TC) MOSFET, N-CH, 100V, 59A, 175DEG C, 94W; TRANSISTOR POLARITY:N CHANNEL; DRAIN SOURCE VOLTAGE VDS:100V; CONTINUOUS DRAIN CURRENT ID:59A; ON RESISTANCE RDS(ON):0.0105OHM; TRANSISTOR MOUNTING:SURFACE MOUNT; RDS(ON) TEST VOLTAGE VGS:10V ROHS COMPLIA. FREE 2 YEAR RADWELL WARRANTY

(PRICE/TC) MOSFET, N-CH, 100V, 59A, 175DEG C, 94W; TRANSISTOR POLARITY:N CHANNEL; DRAIN SOURCE VOLTAGE VDS:100V; CONTINUOUS DRAIN CURRENT ID:59A; ON RESISTANCE RDS(ON):0.0105OHM; TRANSISTOR MOUNTING:SURFACE MOUNT; RDS(ON) TEST VOLTAGE VGS:10V ROHS COMPLIA. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
MOSFET

MOSFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPD122N10N3GATMA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPD122N10N3GATMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPD122N10N3GATMA1
MOSFET N-CH 100V 59A TO252-3

MOSFET N-CH 100V 59A TO252-3

Supplier's Site
Single FETs, MOSFETs - IPD122N10N3GATMA1 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IPD122N10N3GATMA1
Single FETs, MOSFETs IPD122N10N3GATMA1
MOSFET N-CH 100V 59A TO252-3

MOSFET N-CH 100V 59A TO252-3

Supplier's Site Datasheet

Technical Specifications

  RS Components, Ltd. Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Rochester Electronics Newark, An Avnet Company Radwell International VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 2583833 1001298-IPD122N10N3GATMA1 IPD122N10N3GATMA1DKR-ND 278-IPD122N10N3GATMA1 IPD122N10N3GATMA1 85X6027 108066204 IPD122N10N3GATMA1 IPD122N10N3GATMA1 IPD122N10N3GATMA1
Product Name MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD122N10N3GATMA1 Single FETs, MOSFETs 100V 59A TO252 MOSFET Transistor Mosfet, N-Ch, 100V, 59A, 175Deg C, 94W; Channel Type Infineon Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single FETs, MOSFETs
Package Type TO-252 (DPAK); TO-252 SOT3; TO-252 (DPAK); PG-TO252-3 TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) PG-TO252-3 TO-3 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 100 volts 100 volts 100 volts
PD 94000 milliwatts 94 milliwatts 94000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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