N-Channel 100V 180A (Tc) 313W (Tc) Surface Mount PG-TO263-7
N-Channel 100V 180A (Tc) 313W (Tc) Surface Mount PG-TO263-7
N-Channel 100V 180A (Tc) 313W (Tc) Surface Mount PG-TO263-7
MOSFET N-CH 100V 180A TO263-7 Product overview: IPB017N10N5LFATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 180A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 180A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB017N10N5LFATM
Infineon MOSFET IPB017N10N5LFATMA1
Infineon MOSFET IPB017N10N5LFATMA1
Infineon MOSFET IPB017N10N5LFATMA1
Manufacturer: Infineon Technologies
Win Source Part Number: 874670-IPB017N10N5LF
Series: OptiMOS™-5
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 100 V 180A (Tc) 313W (Tc) Surface Mount PG-TO263-7
Package: TO-263-7, D2Pak (6 Leads + Tab)
Package: Reel - TR
Mounting: Surface Mount
Family Name: IPB017
Categories: Discrete Semiconductor Products
Case / Package: PG-TO263-7
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Limited
Quantity per package: 1000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: IPB017N10N5LFATMA1DK
Power Field-Effect Transistor, 180A I(D), 100V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263
MOSFET N-CH 100V 180A TO263-7
MOSFET N-CH 100V 180A TO263-7
MOSFET DIFFERENTIATED MOSFETS
MOSFET, N-CH, 100V, 180A, 313W, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0015ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.3V; Power RoHS Compliant: Yes
| DigiKey | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | Rochester Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPB017N10N5LFATMA1CT-ND | 278-IPB017N10N5LFATMA1 | 2144364P | 2144364 | 874670-IPB017N10N5LFATMA1 | IPB017N10N5LFATMA1 | IPB017N10N5LFATMA1 | IPB017N10N5LFATMA1 | IPB017N10N5LFATMA1 | 93AC7097 |
| Product Name | Single FETs, MOSFETs | 100V 180A MOSFET Transistor | MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB017N10N5LFATMA1 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 100V, 180A, 313W, To-263; Transistor Polarity Infineon | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Package Type | TO-263; TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | TO-263; TO-263 | TO-263; D2pak 7pin (to-263 7pin) | SOT3; PG-TO263-7 | PG-TO263-7 | TO-263; TO-263-7, D²Pak (6 Leads + Tab) | TO-263; TO-263-7, D2PAK (6 Leads + Tab) | TO-3; TO-263 | |
| MOSFET Operating Mode | Enhancement | |||||||||
| V(BR)DSS | 100 volts | 100 volts | ||||||||
| Transconductance | 0.1320 kS |
