N-Channel 40V 80A (Tc) 94W (Tc) Surface Mount PG-TO263-3-2
N-Channel 40V 80A (Tc) 94W (Tc) Surface Mount PG-TO263-3-2
N-Channel 40V 80A (Tc) 94W (Tc) Surface Mount PG-TO263-3-2
MOSFET N-CH 40V 80A TO263-3-2 Product overview: IPB80N04S403ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 80A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 80A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB80N04S403ATMA
Power Field-Effect Transistor, 80A I(D), 40V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Manufacturer: Infineon Technologies
Win Source Part Number: 874750-IPB80N04S403A
Series: OptiMOS™
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: N-Channel 40 V 80A (Tc) 94W (Tc) Surface Mount PG-TO263-3-2
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Package: Reel - TR
Mounting: Surface Mount
Family Name: IPB80N04
Categories: Discrete Semiconductor Products
Case / Package: PG-TO263-3-2
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited
Quantity per package: 1000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: IPB80N04S403ATMA1TR,
MOSFET N-CH 40V 80A TO263-3-2
MOSFET N-CH 40V 80A TO263-3-2
MOSFET, AEC-Q101, N-CH, 40V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0032ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
| DigiKey | ERSAELECTRONICS PTE. LTD. | Rochester Electronics | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPB80N04S403ATMA1TR-ND | 278-IPB80N04S403ATMA1 | IPB80N04S403ATMA1 | 874750-IPB80N04S403ATMA1 | IPB80N04S403ATMA1 | IPB80N04S403ATMA1 | 12AC9705 |
| Product Name | Single FETs, MOSFETs | 40V 80A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB80N04S403ATMA1 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, Aec-Q101, N-Ch, 40V, To-263; Transistor Polarity Infineon | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | PG-TO263-3 | SOT3; PG-TO263-3-2 | Surface Mount | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-3; TO-263 |
| Transistor Grade / Operating Range | Automotive | ||||||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 40 volts | 40 volts |
