Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPA95R450P7

Description
Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950 V CoolMOS™ P7 technology focuses on the low-power SMPS market. Offering 50 V more blocking voltage than its predecessor 900V CoolMOS™ C3, the 950 V CoolMOS™ P7 series delivers outstanding performance in terms of efficiency, thermal behavior and ease-of-use. As the all other P7 family members, the 950 V CoolMOS™ P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. CoolMOS™ P7 is developed with best-in-class VGS(th) of 3 V and a narrow tolerance of only ± 0.5 V, which makes it easy to drive and design-in. Summary of Features Best-in-class FOM RDS(on) Eoss; reduced Qg, Ciss and Coss Best-in-class DPAK RDS(on) of 450 mΩ Best-in-class VGS(th) of 3 V and smallest VGS(th) variation of ±0.5 V Integrated Zener diode ESD protection up to Class 2 (HBM) Best-in-class quality and reliability Benefits Up to 1% efficiency gain and 2°C to 10°C lower MOSFET temperature, compared to CoolMOS™ C3 Enabling higher power density designs, BOM savings, and lower assembly cost Easy to drive and to design-in Better production yield by reducing ESD related failures Less production issues and reduced field returns Potential Applications Lighting Smart meter Mobile phone charger Notebook adaptor AUX power supply Industrial SMPS Applications LED lighting system designs LED strips and signage
  • 500V-950V N-Channel Power MOSFET - IPA95R450P7 - Infineon Technologies AG
    Infineon Technologies AG
  • Transistors - IPA95R450P7 - ODG (Origin Data Global)
    ODG (Origin Data Global)
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Description
Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950 V CoolMOS™ P7 technology focuses on the low-power SMPS market. Offering 50 V more blocking voltage than its predecessor 900V CoolMOS™ C3, the 950 V CoolMOS™ P7 series delivers outstanding performance in terms of efficiency, thermal behavior and ease-of-use. As the all other P7 family members, the 950 V CoolMOS™ P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. CoolMOS™ P7 is developed with best-in-class VGS(th) of 3 V and a narrow tolerance of only ± 0.5 V, which makes it easy to drive and design-in. Summary of Features Best-in-class FOM RDS(on) Eoss; reduced Qg, Ciss and Coss Best-in-class DPAK RDS(on) of 450 mΩ Best-in-class VGS(th) of 3 V and smallest VGS(th) variation of ±0.5 V Integrated Zener diode ESD protection up to Class 2 (HBM) Best-in-class quality and reliability Benefits Up to 1% efficiency gain and 2°C to 10°C lower MOSFET temperature, compared to CoolMOS™ C3 Enabling higher power density designs, BOM savings, and lower assembly cost Easy to drive and to design-in Better production yield by reducing ESD related failures Less production issues and reduced field returns Potential Applications Lighting Smart meter Mobile phone charger Notebook adaptor AUX power supply Industrial SMPS Applications LED lighting system designs LED strips and signage
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Datasheet
Datasheet Summary
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The IPA95R450P7 is a 950 V N-channel MOSFET in a PG-TO-220 FullPAK package, designed for high-voltage switching applications such as flyback converters in LED lighting, low-power adapters, and industrial power supplies. It has a maximum drain-source breakdown voltage of 950 V and a drain-source on-state resistance of 0.45 Ω at 25°C. The gate threshold voltage is 3 V with a variation of ±0.5 V, and it includes an integrated Zener diode for ESD protection up to HBM Class 2. The device has a pulsed drain current rating of 43 A, a total gate charge of 35 nC, and a junction-to-case thermal resistance of 4.1 °C/W. It is fully qualified to JEDEC standards for industrial applications and supports paralleling with recommended gate ferrite beads or totem poles. Operating junction temperature ranges from -55°C to 150°C.

Datasheet Summary
Powered by GS/AI

The IPA95R450P7 is a 950 V N-channel MOSFET in a PG-TO-220 FullPAK package, designed for high-voltage switching applications such as flyback converters in LED lighting, low-power adapters, and industrial power supplies. It has a maximum drain-source breakdown voltage of 950 V and a drain-source on-state resistance of 0.45 Ω at 25°C. The gate threshold voltage is 3 V with a variation of ±0.5 V, and it includes an integrated Zener diode for ESD protection up to HBM Class 2. The device has a pulsed drain current rating of 43 A, a total gate charge of 35 nC, and a junction-to-case thermal resistance of 4.1 °C/W. It is fully qualified to JEDEC standards for industrial applications and supports paralleling with recommended gate ferrite beads or totem poles. Operating junction temperature ranges from -55°C to 150°C.

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Product
Description
Supplier Links
500V-950V N-Channel Power MOSFET - IPA95R450P7 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPA95R450P7
500V-950V N-Channel Power MOSFET IPA95R450P7
Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950 V CoolMOS™ P7 technology focuses on the low-power SMPS market. Offering 50 V more blocking voltage than its predecessor 900V CoolMOS™ C3, the 950 V CoolMOS™ P7 series delivers outstanding performance in terms of efficiency, thermal behavior and ease-of-use. As the all other P7 family members, the 950 V CoolMOS™ P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. CoolMOS™ P7 is developed with best-in-class VGS(th) of 3 V and a narrow tolerance of only ± 0.5 V, which makes it easy to drive and design-in. Summary of Features Best-in-class FOM RDS(on) Eoss; reduced Qg, Ciss and Coss Best-in-class DPAK RDS(on) of 450 mΩ Best-in-class VGS(th) of 3 V and smallest VGS(th) variation of ±0.5 V Integrated Zener diode ESD protection up to Class 2 (HBM) Best-in-class quality and reliability Benefits Up to 1% efficiency gain and 2°C to 10°C lower MOSFET temperature, compared to CoolMOS™ C3 Enabling higher power density designs, BOM savings, and lower assembly cost Easy to drive and to design-in Better production yield by reducing ESD related failures Less production issues and reduced field returns Potential Applications Lighting Smart meter Mobile phone charger Notebook adaptor AUX power supply Industrial SMPS Applications LED lighting system designs LED strips and signage

Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950 V CoolMOS™ P7 technology focuses on the low-power SMPS market.

Offering 50 V more blocking voltage than its predecessor 900V CoolMOS™ C3, the 950 V CoolMOS™ P7 series delivers outstanding performance in terms of efficiency, thermal behavior and ease-of-use. As the all other P7 family members, the 950 V CoolMOS™ P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. CoolMOS™ P7 is developed with best-in-class VGS(th) of 3 V and a narrow tolerance of only ± 0.5 V, which makes it easy to drive and design-in.


Summary of Features

  • Best-in-class FOM RDS(on) Eoss; reduced Qg, Ciss and Coss
  • Best-in-class DPAK RDS(on) of 450 mΩ
  • Best-in-class VGS(th) of 3 V and smallest VGS(th) variation of ±0.5 V
  • Integrated Zener diode ESD protection up to Class 2 (HBM)
  • Best-in-class quality and reliability

Benefits

  • Up to 1% efficiency gain and 2°C to 10°C lower MOSFET temperature, compared to CoolMOS™ C3
  • Enabling higher power density designs, BOM savings, and lower assembly cost
  • Easy to drive and to design-in
  • Better production yield by reducing ESD related failures
  • Less production issues and reduced field returns

Potential Applications

  • Lighting
  • Smart meter
  • Mobile phone charger
  • Notebook adaptor
  • AUX power supply
  • Industrial SMPS

Applications

  • LED lighting system designs
  • LED strips and signage
Supplier's Site Datasheet
Transistors - IPA95R450P7 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
IPA95R450P7
Transistors IPA95R450P7
TO-220FP-3 MOSFETs ROHS

TO-220FP-3 MOSFETs ROHS

Supplier's Site

Technical Specifications

  Infineon Technologies AG ODG (Origin Data Global)
Product Category Power MOSFET Transistors
Product Number IPA95R450P7 IPA95R450P7
Product Name 500V-950V N-Channel Power MOSFET Transistors
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.4500 ohms
QG 35 nC
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