The IPB020N08N5 is an N-channel MOSFET in a PG-TO263-3 (D²PAK) package, designed for high-frequency switching and synchronous rectification in power supplies. It has a drain-source breakdown voltage of 80 V, a maximum on-state resistance of 2.0 mΩ at 10 V gate-source voltage and 100 A drain current, and a continuous drain current rating of 173 A at 150 °C case temperature. The device features a total gate charge of up to 166 nC and is rated for operating and storage temperatures from -55 °C to 175 °C. It is qualified according to JEDEC standards, RoHS compliant, and halogen-free according to IEC 61249-2-21. The thermal resistance from junction to case is 0.4 to 0.5 K/W, and the device is avalanche tested with a single-pulse energy rating of 674 mJ at 100 A.
Industry leading power MOSFET technology for telecom and server applications with OptiMOS™ 5 80V in D2PAK package
Infineon’s OptiMOS™ 5 80V industrial power MOSFET IPB020N08N5 offers a RDS(on) reduction of 43% compared to previous generations and is ideally suited for high switching frequencies. The devices of this family are especially designed for synchronous rectification in telecom and server power supplies. In addition, they can also be utilized in other industrial applications such as solar, low voltage drives and adapters.
Summary of Features
Benefits
Potential Applications
Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPB020N08N5 |
| Product Name | N-Channel Power MOSFET |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0020 ohms |
