Infineon Technologies AG Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPB081N06L3 G IPB081N06L3-G

Description
OptiMOS™ 60 V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. Summary of Features Excellent gate charge x RDS(on) product (FOM) Very low on-resistance RDS(on) Ideal for fast switching applications RoHS compliant - halogen free MSL1 rated Benefits Highest system efficiency Less paralleling required Increased power density System cost reduction Very low voltage overshoot Potential Applications Synchronous rectification Solar micro inverter Isolated DC-DC converters Motor control for 12-48 V systems Or-ing switches
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Description
OptiMOS™ 60 V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. Summary of Features Excellent gate charge x RDS(on) product (FOM) Very low on-resistance RDS(on) Ideal for fast switching applications RoHS compliant - halogen free MSL1 rated Benefits Highest system efficiency Less paralleling required Increased power density System cost reduction Very low voltage overshoot Potential Applications Synchronous rectification Solar micro inverter Isolated DC-DC converters Motor control for 12-48 V systems Or-ing switches
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Datasheet
Datasheet Summary
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The IPB081N06L3G is an N-channel silicon MOSFET designed for high-efficiency power conversion applications such as synchronous rectification and DC-DC conversion. It comes in a PG-TO220-3 package measuring 10.25 mm × 4.7 mm × 9.2 mm and is rated for a continuous drain current of 80 A at 25°C and a drain-source breakdown voltage of 60 V. The device has a maximum on-resistance of 8.1 mΩ at 25°C and is qualified to RoHS standards. Thermal resistance from junction to case is 1.1 K/W. It meets the AEC-Q200 automotive qualification standard.

Datasheet Summary
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The IPB081N06L3G is an N-channel silicon MOSFET designed for high-efficiency power conversion applications such as synchronous rectification and DC-DC conversion. It comes in a PG-TO220-3 package measuring 10.25 mm × 4.7 mm × 9.2 mm and is rated for a continuous drain current of 80 A at 25°C and a drain-source breakdown voltage of 60 V. The device has a maximum on-resistance of 8.1 mΩ at 25°C and is qualified to RoHS standards. Thermal resistance from junction to case is 1.1 K/W. It meets the AEC-Q200 automotive qualification standard.

Suppliers

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Supplier Links
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPB081N06L3 G - IPB081N06L3-G - Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPB081N06L3 G
IPB081N06L3-G
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPB081N06L3 G IPB081N06L3-G
OptiMOS™ 60 V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. Summary of Features Excellent gate charge x RDS(on) product (FOM) Very low on-resistance RDS(on) Ideal for fast switching applications RoHS compliant - halogen free MSL1 rated Benefits Highest system efficiency Less paralleling required Increased power density System cost reduction Very low voltage overshoot Potential Applications Synchronous rectification Solar micro inverter Isolated DC-DC converters Motor control for 12-48 V systems Or-ing switches

OptiMOS™ 60 V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger.

In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter.


Summary of Features

  • Excellent gate charge x RDS(on) product (FOM)
  • Very low on-resistance RDS(on)
  • Ideal for fast switching applications
  • RoHS compliant - halogen free
  • MSL1 rated

Benefits

  • Highest system efficiency
  • Less paralleling required
  • Increased power density
  • System cost reduction
  • Very low voltage overshoot

Potential Applications

  • Synchronous rectification
  • Solar micro inverter
  • Isolated DC-DC converters
  • Motor control for 12-48 V systems
  • Or-ing switches
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IPB081N06L3-G
Product Name Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPB081N06L3 G
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0081 ohms
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