The IPB081N06L3G is an N-channel silicon MOSFET designed for high-efficiency power conversion applications such as synchronous rectification and DC-DC conversion. It comes in a PG-TO220-3 package measuring 10.25 mm × 4.7 mm × 9.2 mm and is rated for a continuous drain current of 80 A at 25°C and a drain-source breakdown voltage of 60 V. The device has a maximum on-resistance of 8.1 mΩ at 25°C and is qualified to RoHS standards. Thermal resistance from junction to case is 1.1 K/W. It meets the AEC-Q200 automotive qualification standard.
OptiMOS™ 60 V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger.
In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter.
Summary of Features
Benefits
Potential Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPB081N06L3-G |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPB081N06L3 G |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0081 ohms |