IPB014N06N is an N-channel MOSFET optimized for synchronous rectification, packaged in a TO-263-7 case. It has a continuous drain current of 180 A, a drain-source breakdown voltage of 60 V, and a maximum on-state resistance of 1.4 mΩ at 10 V gate-source voltage. The device is 100% avalanche tested with a single-pulse avalanche energy of 420 mJ at 100 A drain current. Thermal resistance from junction to case is 0.7 K/W, and it operates from -55 °C to 175 °C. The part is RoHS compliant and halogen-free according to IEC 61249-2-21, and qualified per JEDEC standards J-STD-20 and JESD22.
IPB014N06N - OptiMOS N Channel Power Transistor
| Rochester Electronics | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPB014N06NE8197ATMA1 |
| Package Type | PG-TO263-7, D2PAK |
