The IPD220N06L3-G is an N-channel power MOSFET in a DPAK package, designed for high-efficiency switching applications such as synchronous rectification and DC-DC conversion. It features a drain-source breakdown voltage of 60 V, a maximum on-state resistance of 2.2 mΩ at 10 V gate-source voltage and 25 °C junction temperature, and a continuous drain current of 220 A. The device is RoHS compliant and suitable for operation from -55 °C to 175 °C. It meets AEC-Q200 automotive qualification standards and is rated for MOSFET technology with low gate charge and fast switching performance.
OptiMOS™ 60 V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger.
In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter.
Summary of Features
Benefits
Potential Applications
Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPD220N06L3-G |
| Product Name | N-Channel Power MOSFET |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0220 ohms |