N-Channel 650V 15.1A (Tc) 31W (Tc) Through Hole PG-TO220-FP
Power Field-Effect Transistor, 650V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Manufacturer: Infineon Technologies
Win Source Part Number: 1324734-IPA65R400CEX
Category: Discrete Semiconductor Products>Transistors
Packaging: Tube
Standard Package: 50
Mounting: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
FET Feature: Super Junction
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 15.1A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Power Dissipation (Max): 31W (Tc)
Supplier Device Package: PG-TO220-FP
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: TO-220-3 Full Pack
ECCN: EAR99
Fake Threat In the Open Market: 66
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: SP001429766
Base Product Number: IPA65R400
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: ROHS3 Compliant
MOSFET N-CH 650V TO220 Product overview: IPA65R400CEXKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPA65R400CEXKSA1
MOSFET N-CH 650V TO220
MOSFET, N-CH, 650V, 15.1A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:15.1A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.36ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
| DigiKey | Rochester Electronics | Win Source Electronics | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 448-IPA65R400CEXKSA1-ND | IPA65R400CEXKSA1 | 1324734-IPA65R400CEXKSA1 | 2183008 | 278-IPA65R400CEXKSA1 | IPA65R400CEXKSA1 | IPA65R400CEXKSA1 | 12AC9698 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFETs | 650V TO220 MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 650V, 15.1A, To-220Fp; Transistor Polarity Infineon | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | ||||
| Package Type | TO-220; TO-220-3 Full Pack | PG-TO22-3 | TO-220; SOT3; TO-220-3 Full Pack | TO-220; TO-220 | Tube | TO-220; TO-220-3 Full Pack | TO-3; TO-220 | |
| rDS(on) | 0.4000 ohms | 0.3600 ohms | ||||||
| Packing Method | Tube; Tube | Tube; Tube | Tube | Tube; Tube | ||||
| PD | 31000 milliwatts | 31 milliwatts |
