CoolMOS™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies
The 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs.
Efficiency and TCO (total cost of ownership) applications such as hyperdata centers and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by CoolMOS™ C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V CoolMOS™ C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ~10% for PSU energy loss.
Summary of Features
Reduced switching loss parameters such as Q G, C oss, E oss
Best-in-class figure of merit Q G*R DS(on)
Increased switching frequency
Best R (on)*A in the world
Rugged body diode
Benefits
Enables increasing switching frequency without loss in efficiency
Measure showing key parameter for light load and full load efficiency
Doubling the switching frequency will half the size of magnetic components
Smaller packages for same R DS(on)
Can be used in many more positions for both hard and soft switching topologies
Potential Applications
Server
Telecom
PC power
Solar
Industrial
USB-PD
Applications
DIN rail power supplies
Solutions for inductive wireless charging above 50 W
Telecommunication infrastructure EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs
Download Gate Driver ICs overview
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1ED44173N01B | Gate driver ICs
IRS4427S | Gate driver ICs
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1ED44171N01B | Gate driver ICs
1ED44173N01B | Gate driver ICs
CoolMOS™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies
The 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs.
Efficiency and TCO (total cost of ownership) applications such as hyperdata centers and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by CoolMOS™ C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V CoolMOS™ C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ~10% for PSU energy loss.
Summary of Features
- Reduced switching loss parameters such as Q G, C oss, E oss
- Best-in-class figure of merit Q G*R DS(on)
- Increased switching frequency
- Best R (on)*A in the world
- Rugged body diode
Benefits
- Enables increasing switching frequency without loss in efficiency
- Measure showing key parameter for light load and full load efficiency
- Doubling the switching frequency will half the size of magnetic components
- Smaller packages for same R DS(on)
- Can be used in many more positions for both hard and soft switching topologies
Potential Applications
- Server
- Telecom
- PC power
- Solar
- Industrial
- USB-PD
Applications
- DIN rail power supplies
- Solutions for inductive wireless charging above 50 W
- Telecommunication infrastructure
EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs
Download Gate Driver ICs overview
Designers who used this product also designed with
- IRS4427S |
Gate driver ICs
- 1ED3124MU12F |
Gate driver ICs
- 1ED44171N01B |
Gate driver ICs
- 1ED44173N01B |
Gate driver ICs
- IRS4427S |
Gate driver ICs
- 1ED3124MU12F |
Gate driver ICs
- 1ED44171N01B |
Gate driver ICs
- 1ED44173N01B |
Gate driver ICs
- IRS4427S |
Gate driver ICs
- 1ED3124MU12F |
Gate driver ICs
- 1ED44171N01B |
Gate driver ICs
- 1ED44173N01B |
Gate driver ICs